BD537K

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	8A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	800mV @ 200mA, 2A
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 2A, 2V
Power - Max:	50W
Frequency - Transition:	12MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Base Part Number:	BD537

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction
The BD537K is a type of single bipolar junction transistor (BJT) that is manufactured by NXP semiconductor. The BD537K transistor is mainly used as a switch or amplifier. The BD537K provides high switching performance, excellent thermal stability, low saturation voltage and good recovery characteristics for improved audio quality. The transistor is made with a NPN construction, meaning it has a positive emitter lead, a negative collector lead, and a negative base lead.Package Specifications
The BD537K transistor is available in both the SOT-223 (DO-214AA) package and the TO-92 package. It also has a low profile metal can package. The SOT-223 (DO-214AA) package consists of a metal case with a plastic insulating material attached to each terminal. The metal case of the TO-92 package is attached to a plastic insulating material. The metal can of the low profile package is attached to an insulating material.Electrical Specifications
The electrical characteristics of the BD537K transistor include a maximum collector-emitter voltage of 30V, a base-emitter voltage of 6V, and a collector-emitter saturation voltage of 0.4V. The transistor also has a current gain of 200 to 1000. The DC current gain is specified for operation between -55°C and 150°C. The collector-base breakdown voltage is typically 100V. The reverse-transmission capacitance is 10pF.Working Principle
The BD537K is a type of NPN bipolar junction transistor (BJT). A BJT is a three-terminal device in which the current flows between two terminals (collector and emitter) via an external circuit when a voltage is applied to a third terminal (base). The collector current is controlled by the base-emitter voltage (Vbe). The collector current is exponentially proportional to the base-emitter voltage. The transistor can be used as a switch, amplifier, or oscillator.Applications
The BD537K can be used in a variety of applications. It can be used as a switch, amplifier, or oscillator. It can also be used in audio applications such as high-efficiency audio amplifiers, audio power amplifiers, and audio signal processing circuits, as well as applications for portable devices such as mobile phones and personal digital assistants (PDAs). The transistor can be used in industrial control systems, telecommunications systems, medical equipment, power supplies, and automotive electronics.Conclusion
The BD537K is a type of single bipolar junction transistor (BJT) manufactured by NXP Semiconductor. The transistor is available in SOT-223 (DO-214AA), TO-92 and low profile metal can packages. The electrical characteristics of the BD537K include maximum collector-emitter voltage of 30V, base-emitter voltage of 6V, and collector-emitter saturation voltage of 0.4V. The BD537K can be used as a switch, amplifier, or oscillator and is suitable for applications in audio, portable devices, industrial control systems, telecommunications, medical equipment, and automotive electronics.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description