BD536 Discrete Semiconductor Products

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The BD536 is a medium power silicon PNP transistor designed for high current amplification applications. It has a high gain of 150mV/mA and is capable of switching up to 5A at a collector voltage of 16V. The BD536 is typically used in audio amplifiers, power switches and power switching circuits. It is also used as a regulator in computer power supplies.

The BD536 is part of a series of PNP transistors manufactured by NXP Semiconductor, a major semiconductor manufacturer based in the United States. The BD536 is a medium to high power device, and is ideal for applications that require high current switching or amplification with low noise and distortion. The device also has a wide range of applications, from small discrete transistor radios to large-scale industrial power supply systems.

The BD536 is a bipolar Junction Transistor (BJT). This type of transistor consists of two p-type and one n-type region of semiconductor material. The two p-type regions are known as the emitter and collector, while the single n-type region is known as the base. The transistor is usually constructed with three pins, the emitter, collector, and base pins, which are connected to the respective regions. The BD536 has a maximum collector-emitter voltage rating of 16V and a maximum current rating of 5A.

The working principle of the BD536 involves the selective flow of current between its emitter and collector pins. When a positive voltage is applied to the base pin, which is connected to the n-type region of the transistor, electrons (negative charge carriers) are drawn in from the emitter pin, which is connected to the p-type region. This creates a depletion zone in the middle of the transistor at the base region, allowing current to flow from the collector to the emitter when the base voltage is greater than the combined voltage at the collector and emitter. Conversely, when the base voltage is lower than the combined voltage at the collector and emitter, the depletion zone is filled again, preventing current from flowing from the collector to the emitter. This is known as the Cutoff Region of the transistor and is used to control the current flow in the circuit, enabling switching and amplification to occur.

The current gain of a transistor is known as its β, and is a measure of how much current a transistor can control with a small amount of base current. The BD536 has a typical β of 150mV/mA, meaning that it can switch or amplify a 5A current with only 0.08mA of base current. This makes the BD536 an ideal choice for circuits where high current switching or amplification is required with low noise and distortion.

In summary, the BD536 is a medium power silicon PNP transistor from NXP Semiconductor, designed for high current amplification applications such as audio amplifiers, power switches and computer power supplies. It is a bipolar Junction Transistor (BJT) with a maximum collector-emitter voltage rating of 16V and a maximum current rating of 5A. It has a high gain of 150mV/mA, enabling it to switch or amplify up to 5A at a collector voltage of 16V with only 0.08mA of base current. This makes the BD536 an ideal choice for applications where high current switching or amplification is required with low noise and distortion.

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