Allicdata Part #: | BD536J-ND |
Manufacturer Part#: |
BD536J |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 8A TO-220 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 8A 12MHz 50W Thro... |
DataSheet: | BD536J Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 800mV @ 600mA, 6A |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 2A, 2V |
Power - Max: | 50W |
Frequency - Transition: | 12MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Base Part Number: | BD536 |
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Transistors - Bipolar (BJT) - Single
The BD536J is a single bipolar (BJT) transistor designed for use in applications such as audio, high speed, and low power switching. The transistor is able to provide high gain, low noise, and excellent linearity, making it ideal for precision design applications.
Applications
The BD536J has a wide range of applications, including:
- Audio amplifiers
- High speed switching
- Linear devices for analog to digital conversion
- Low noise amplifiers
- Low power switches
- Motor control
- Power switching
- Relay control
- Voltage regulator circuits
Working Principle
The BD536J is a bipolar junction transistor that utilizes the PN junction to control current flow. This junction is the point where two distinct pieces of the active layer of semiconductor material meet. The active layer or base region of the BD536J is normally doped with P-type material, which allows it to hold a relatively large number of holes. Conversely, the emitter region is doped with N-type material to contain a relatively large number of electrons.
When the base of the transistor is stimulated with a small current, this current causes the emitter-base junction to forward-bias and the collector-base junction to reverse-bias. This allows the transistor to collect current flow in the emitter-collector region, while blocking current flow in the reverse direction.
The BD536J can also be used in voltage regulator circuits. A reference voltage is applied to the base of the transistor, and the collector and emitter circuits are used to produce a load voltage. This load voltage is then used as a reference voltage for the circuits, thus providing stable voltage regulation.
The BD536J is also able to provide excellent linearity and is suitable for use in analog to digital converters and noise amplifiers. In these applications, the transistor is used in conjunction with a feedback loop to provide a constant gain, ensuring precise linearity.
Features
The BD536J has a wide range of features that make it an ideal choice for high speed and low power applications including:
- High Gain: At high frequencies, the BD536J delivers gains up to 150, making it ideal for high frequency applications.
- Low Noise: The BD536J\'s low noise operation ensures excellent results.
- Excellent Linearity: The transistor\'s high gain and low noise operation combine to provide excellent linearity.
- High Speed: The BD536J can switch at frequencies up to 1MHz.
- Low Power: At lower frequencies, the BD536J is able to operate with very low power dissipation.
Conclusion
The BD536J is a reliable and versatile single bipolar transistor designed for use in high speed and low power applications. Its high gain, low noise, and excellent linearity make it ideal for precision design applications such as audio amplifiers, motor control, and relay control. The BD536J is also suitable for low power applications such as low power switches and voltage regulator circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
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