BD537J Allicdata Electronics
Allicdata Part #:

BD537J-ND

Manufacturer Part#:

BD537J

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 80V 8A TO-220
More Detail: Bipolar (BJT) Transistor NPN 80V 8A 12MHz 50W Thro...
DataSheet: BD537J datasheetBD537J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2A, 2V
Power - Max: 50W
Frequency - Transition: 12MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Base Part Number: BD537
Description

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The transistor BD537J is a bipolar junction transistors (BJT) commonly used to amplify both digital and analog signals. It can also be used as an electronic switch to control the current flow in a circuit. The transistor consists of three layers of semiconductor material, the base, collector and emitter.

The transistor works by controlling the current flow from the collector to the emitter using a small current flowing into the base. As current flows through the transistor, the collector-emitter current is controlled or amplified by the base-emitter junctions.

The BD537J is a single transistor that typically has a voltage range of 25 to 100 volts. It has a very high input impedance meaning that signals can pass through without significant distortion from noise or distortion due to excessive resistance. The transistor has a maximum power dissipation of 500 milliwatt, which makes it suitable for many applications where the power dissipation is relatively low.

The BD537J is well known for its low noise and high gain, making it ideal for low power radio-frequency (RF) applications as well as some digital communication applications. It is also well suited for use in audio amplification, RF amplifiers, and switched mode power supplies (SMPS). It has a very low collectors-emitter saturation voltage meaning it can be used as an electronic switch to accurately control the current flowing through a circuit without creating significant voltage drop.

The BD537J transistor typically operates at a frequency range of 2 to 25 MHz, making it suitable for many RF applications. It also has a very high current gain, meaning that it can produce high current signals with relatively low input power. This makes it especially useful in audio amplifiers, where it can provide amplified output with minimal input power.

The BD537J is well-suitedto a wide rangeof applications including RF communications, audio amplifiers, and electronic switches. It has a low noise, high gain and highcurrent gain, allowing it to produce high quality signals with relatively low power inputs. In addition, it has a very low collector-emitter saturation voltage, making it an ideal switch for power control and low power applications.

The specific data is subject to PDF, and the above content is for reference

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