BD898A-S Allicdata Electronics
Allicdata Part #:

BD898A-S-ND

Manufacturer Part#:

BD898A-S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Bourns Inc.
Short Description: TRANS PNP DARL 60V 8A
More Detail: Bipolar (BJT) Transistor PNP - Darlington 60V 8A ...
DataSheet: BD898A-S datasheetBD898A-S Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 16mA, 4A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: --
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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The BD898A-S is a general-purpose bipolar junction transistor, commonly referred to as a BJT. It is a three-terminal semiconductor device, made up of two PN-type junctions, that can be used to amplify and/or switch electrical signals in electronic circuits. Specifically, the BD898A-S is a single BJT, making it suitable for applications that require low-level voltage differences to be amplified or switched.

The BD898A-S consists of two p-type and one n-type semiconductor layers, forming three terminals – the emitter, base, and collector. The emitter acts as the input terminal, where a small current is injected. The base connection is used to control the amount of current flowing between the emitter and collector, while the collector acts as the output terminal. This type of device is commonly used in a variety of amplifier and switching circuits, due to its ability to control the flow of electrons between the emitter and collector.

The working principle of a BJT can be described as an active semiconductor device, capable of controlling a relatively large amount of current while requiring a relatively small current flow through its base-emitter junction. This is achieved through the use of a small current, typically referred to as bias current, flowing through the base junction. This bias current then allows a relatively large amount of current to flow from the emitter to the collector of the device. In other words, the base current is used to control the amount of current flowing from the emitter to the collector.

The BD898A-S can be used for a variety of applications, such as in the following: electrical power switches, speakers, amplifiers, radio receivers and transmitters, hard disk drives, medical equipment, and automotive electronics. Additionally, the device has been designed to be used in a wide range of temperature (-55°C to 150°C) and voltage range (up to 80V) applications. Furthermore, the BD898A-S is also immune to radiation, making it suitable for space and military applications.

In summary, the BD898A-S is a single-junction bipolar junction transistor that is used in a variety of amplifier and switching circuits. It has three terminals, namely the emitter, base, and collector, and is capable of controlling a relatively large amount of current when a small current is supplied through its base-emitter junction. The device is suitable for a wide range of temperature and voltage range applications and has been designed to be radiation-proof, making it suitable for space and military applications.

The specific data is subject to PDF, and the above content is for reference

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