Allicdata Part #: | BDW73C-S-ND |
Manufacturer Part#: |
BDW73C-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS NPN DARL 100V 8A |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 8A ... |
DataSheet: | BDW73C-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 80mA, 8A |
Current - Collector Cutoff (Max): | 500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 3A, 3V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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.The BDW73C-S is a bipolar junction transistor (BJT) designed for use in a variety of applications. It is a single component and is capable of handling moderate power levels as well as a variety of signal levels. Due to the wide range of uses it can accommodate, it is a popular choice among electronics hobbyists, educational researchers, and industry professionals. In this article, we will explain the application field and working principle of the BDW73C-S.
What is a Bipolar Junction Transistor (BJT)?
A bipolar junction transistor (BJT) is a type of transistor that has three terminals: a base, a collector, and an emitter. The BJT is composed of two types of semiconductor materials: p-type and n-type. A p-type material has a positive charge, while an n-type material has a negative charge. When the base electrode is charged, current flows between the collector and emitter. The current is determined by the amount of charge on the base. The BJT is a type of active component capable of amplifying a signal, as it is able to handle large signal levels.
The Application Field and Working Principle of the BDW73C-S
The BDW73C-S is a high-performance bipolar junction transistor suitable for a variety of applications. It comprises of a p-type silicon layer with a nitride-oxide passivation and a Nickel-chromium collector, enabling it to handle medium-sized power levels up to around 3A. It is capable of operating at a voltage range of -20V to +20V and a temperature range of -55°C to + 150°C. The BDW73C-S is suitable for linear and switching applications, allowing it to be used in amplifier circuits and DC/DC converters. It is widely used in battery operated applications, where its low power consumption and minimal heat dissipation proves to be an advantage.
The working principle of the BDW73C-S is as follows: when a voltage is applied to the emitter, current flows through the base-emitter junction. This current then flows through the base, which then starts to turn the transistor on, increasing the current flow through the collector-emitter junction. This current then starts to increase exponentially, giving the amplifier its linear behavior. When the base-emitter voltage is removed, the BJT is turned off and the current flow stops. This can be seen in the following graph:
Conclusion
The BDW73C-S is a versatile bipolar junction transistor suitable for a wide range of applications. Its ability to handle signals of various levels, as well as moderate power, makes it a popular choice among hobbyists and professionals. Its low power consumption and high stability make it ideal for battery-operated applications. Furthermore, its working principle illustrates how enabling the base-emitter junction allows the collector-emitter junction to experience a current increase exponentially, which is necessary for amplifying a signal.
The specific data is subject to PDF, and the above content is for reference
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