BDW74C-S

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Bipolar junction transistors (BJT) are one of the most common types of transistors. They are used for various applications in electronic circuits, including amplifiers, switches, and voltage regulators. The BDW74C-S is a single pin-out, NPN, PNP, and NMOS transistor. It is typically used in general and high power amplifier, switching and current control applications.

Working Principle

Bipolar junction transistors (BJT) are active components, meaning that they require a certain amount of voltage and current to function. They consist of three main parts: a base, collector, and emitter. BJTs operates using two p-n junctions; one between the base and emitter, and one between the base and collector. The base of the BJT acts as a control element, the emitter supplies current, and the collector takes in current. Depending on the voltage applied to the base, BJTs can be used as either an amplifier, switch, or current regulator.

BDW74C-S Features

The BDW74C-S has many desirable features, making it one of the most commonly used single transistors. It is rated at 600mA, 60V, and is packaged in a TO-220 case. It is an NPN, PNP, and NMOS transistor, offering multiple capabilities. It has a wide maximum collector-emitter voltage (VCEO) range, from -60 to +60V. It has a maximum power dissipation rating of 625mW and a collector-base voltage (VCBO) range of -60 to +60V. It has a high base-emitter voltage (VEBO) of -7V, a h FE maximum of at least 300, and a collector-emitter saturation ability of .01V.

Blocking and Sustaining Voltage

The BDW74C-S has a blocking voltage of 2.0V, meaning that it requires at least 2V of potential before it can draw current through the emitter-base diode. In addition, it has a sustaining voltage of between 0.9V and 1.1V. This means that the high side of the transistor needs to be above 1.2V for the transistor to be switched “ON”. This allows the transistor to not draw current through the base-emitter junction, making it useful for preventing static current.

Applications of BDW74C-S

The BDW74C-S can be used in a wide range of applications, including general amplifiers, high power amplifiers, switching, and current control applications. In amplifiers, the transistor is often used as an emitter follower to provide a better gain, bandwidth, and control operation than single transistors. It can also be used in many switching applications, as it offers bi-directional switching. Its collector-base voltage range allows it to be used as a voltage regulator, as the base current can be controlled to manage the amount of current allowed through the collector-emitter junction.

Conclusion

The BDW74C-S is a single pin-out, NPN, PNP, and NMOS transistor that is used for general and high power amplifiers, switching, and current control applications. It is a 600mA, 60V transistor that comes with a wide maximum VCEO and VCO ranges, a high VEBO, a hFE maximum of at least 300, and a collector-emitter saturation ability of .01V. Its 2.0V blocking voltage and 0.9V to 1.1V sustaining voltage make it useful for preventing static current. Its multiple capabilities, combined with its desirable features, make the BDW74C-S an ideal transistor for many different applications.

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