BDW74B-S

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Introduction

The BDW74B-S is a Low VCE(Sat) Bipolar Junction Transistor, consisting of a NPN epitaxial silicon planar structure. The planar structure provides a drain current which is closely matched along the length of the device. The BDW74B-S features low base-emitter saturation voltage (Vce(sat) = 0.2V min at Ic = 10mA), high collector current (Ic = 150mA min) and low collector-emitter saturation voltage (Vcesat = 0.25V max). It has built-in avalanche protection diodes for the base and the collector-emitter junction.

Application fields

The BDW74B-S is designed for applications in the following fields: circuit switching, DC switching,sensing and amplifying circuits, power supply regulation, current measurement and control, etc. Additionally, it can be useful for audio applications, where accurate amplification is mandatory. It is suitable for use in power converters, motor drives, LED drivers and other general switching applications. Besides, it can be used in automotive and industrial applications, where large currents and high speed requirements are needed.

Working principle

A Bipolar Junction Transistor (BJT) is an active semiconductor component that is formed with three layers of different doped semiconductor materials. It consists of two N-type and one P-type layers that are placed in close proximity to each other. When a positive voltage is applied to its base (B) terminal, current begins to flow from the emitter (E) to the collector (C) terminal. This current is controlled by the voltage applied to the base and is called the collector current. The BDW74B-S transistor is designed to operate at low base-emitter voltage and low collector-emitter voltage for maximum current gain (hfe). It has avalanche protection diodes which enables it to handle large voltage spikes.

Conclusion

The BDW74B-S is a Low VCE(Sat) Bipolar Junction Transistor, designed for applications where accurate amplification and high current capability are required. It is suitable for use in power converters, motor drives, LED drivers and other general switching applications. Its avalanche protection diodes enable it to handle large voltage spikes. The BDW74B-S features low base-emitter saturation voltage (Vce(sat) = 0.2V min at Ic = 10mA), high collector current (Ic = 150mA min) and low collector-emitter saturation voltage (Vcesat = 0.25V max).

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