Allicdata Part #: | BF770AE6327-ND |
Manufacturer Part#: |
BF 770A E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR RF NPN 12V SOT-23 |
More Detail: | RF Transistor NPN 12V 90mA 6GHz 300mW Surface Moun... |
DataSheet: | BF 770A E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 6GHz |
Noise Figure (dB Typ @ f): | 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz |
Gain: | 9.5dB ~ 14.5dB |
Power - Max: | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 30mA, 8V |
Current - Collector (Ic) (Max): | 90mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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.BF 770A E6327 is a type of transistor (bipolar junction transistor, BJT) that is specifically designed to operate in the radio frequency (RF) range. It has a wide variety of applications and is used in radios, communications equipment, medical imaging equipment, and many other electronic circuits.
The BF 770A E6327 is a NPN transistor with a collector-emitter voltage rating of 63V. It has a maximum collector current of 2.5A and a maximum power dissipation of 800mW. Its typical DC current gain is between 5 and 20 (hFE). It has a maximum operating frequency of 500MHz and a collector-base capacitance of 5pF. The package size is a TO-92 type and it is available in through-hole and surface mount versions.
BF 770A E6327 transistors feature superior performance and high levels of reliability, making them an ideal choice for a variety of high-frequency applications. The transistors feature a wide bandwidth that allows them to be used in high-frequency communication and medical imaging applications. They are also used in radio applications such as FM, AM, and shortwave receivers. The transistors feature a low noise figure of 3dB, making them suitable for low-noise amplifiers.
The working principle of the BF 770A E6327 transistor is based on the operation of a NPN transistor. The collector is connected to the base, which in turn is connected to the emitter. The transistor is biased so that it is switched on when the base-emitter junction is forward biased, and is turned off when the junction is reverse biased. When the transistor is switched on, current flows from the collector to the emitter, and the output voltage is proportional to the input current. The current gain of the transistor (the ratio of output voltage to input current) is determined by the ratio of collector current to base current.
The BF 770A E6327 transistor is a reliable, high frequency transistor designed for a range of applications including communications and medical equipment. It is available in through-hole and surface mount versions, and features a wide bandwidth, low noise figure, and high level of reliability. It is an ideal choice for high frequency applications in a variety of industries.
The specific data is subject to PDF, and the above content is for reference
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