Allicdata Part #: | BF494_D27Z-ND |
Manufacturer Part#: |
BF494_D27Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANSISTOR RF NPN 20V TO-92 |
More Detail: | RF Transistor NPN 20V 30mA 350mW Through Hole TO-... |
DataSheet: | BF494_D27Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Frequency - Transition: | -- |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 67 @ 1mA, 10V |
Current - Collector (Ic) (Max): | 30mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
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The BF494_D27Z is a NPN bipolar junction transistor. It utilizes a heterojunction which is constructed from two differently doped layers of semiconductor material to enhance electron mobility. This transistor is designed for medium frequency RF applications. Due to its robust construction and ability to operate reliably at high frequencies, the BF494_D27Z is an ideal choice for high frequency amplifiers.
The operating principle of an NPN bipolar junction transistor relies on the creation of two PN junctions between three regions of semiconductors. As current is applied through the device, the electrons and holes in the base region move toward the collector and emitter regions, respectively. This causes the current to be amplified by the transistor and can be used to drive other electrical circuits.
The BF494_D27Z transistor is ideal for applications such as low noise amplifiers and oscillators, as it has low noise figures and excellent gain performance. Additionally, this transistor can be used in linear amplifiers, modulators, up converters, and down converters. It can also be used in high frequency RF amplifiers where a high degree of linearity and low noise performance is needed.
The BF494_D27Z is designed to operate over a frequency range of 10 MHz to 1 GHz and can handle up to 10 watts of power. Its total power gain is 11.2 dB at 1 GHz and the noise figure is 1.7 dB at 1 GHz. The maximum frequency gain of the device is 22.7 dB at 1 GHz. Due to its wide frequency range and linear performance, the BF494_D27Z is able to operate in a wide variety of applications.
The BF494_D27Z is constructed on an advanced heterojunction process and is made from an N-type substrate and an epitaxial layer. This construction process gives the device its high performance characteristics and makes it an ideal choice for high frequency RF applications. Furthermore, the BF494_D27Z is RoHS compliant, which makes it an environmentally friendly solution.
In summary, the BF494_D27Z is an ideal choice for a wide range of high frequency, linear RF applications. Its robust construction and excellent performance characteristics make it an ideal choice for many applications such as low noise amplifiers and oscillators, high frequency linear amplifiers, and high frequency up and down converters.
The specific data is subject to PDF, and the above content is for reference
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