Allicdata Part #: | BF493SG-ND |
Manufacturer Part#: |
BF493SG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 350V 0.5A TO-92 |
More Detail: | Bipolar (BJT) Transistor PNP 350V 500mA 50MHz 625m... |
DataSheet: | BF493SG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 350V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 2mA, 20mA |
Current - Collector Cutoff (Max): | 10nA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 10mA, 10V |
Power - Max: | 625mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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The BF493SG is a bipolar junction transistor (BJT). It is a single-type transistor with many applications. It is primarily intended for use as an amplifier, switch, or all-around amplifier in small-signal circuits. Specifically, it has low noise, wide bandwidth, and low distortion.
The BF493SG is an NPN transistor, meaning it is composed of two P-type layers that are separated by an N-type layer. This configuration allows holes to pass from emitter to collector while electrons flow from collector to emitter. This makes it possible to regulate larger amounts of current using smaller electrical signals. The output is thus determined by the input current and the gain of the transistor.
The figure below shows the circuit diagram of the BF493SG in preparation for use. Here, the input is fed into the base of the transistor and the output is determined by the voltage at the collector. If a negative input is applied to the base, the voltage at the collector will rise as indicated by a negative output.
The working principle of the BF493SG is based on a four-layer structure. The base-collector (BC) junction is composed of p-type and n-type semiconductors. The base-emitter (BE) junction is composed of another p-type and n-type semiconductor. A positive voltage is applied across the collector-emitter junction to allow current to flow from the emitter to the collector. A negative voltage is applied across the base-emitter junction to increase the current flow from the emitter to the collector.
When an input signal is applied to the base of the transistor, the base-emitter junction will be forward biased. This allows an amplified version of the base current to flow through the collector-emitter junction, thus controlling the current output. The frequency response of the circuit can be adjusted by changing the capacitance at the base. The output obtained is proportional to the input signal, and the amplification of the signal is dependent on the gain of the transistor.
The BF493SG has numerous applications in the field of electronics. It can be used as an amplifier, switch, or buffer in audio, video, and other of circuits. The BF493SG can be used to amplify voltage and current signals, amplify direct current, switch operations such as those used for relay control and timer circuits, and buffer circuits used for mixed-signal applications. Furthermore, the BF493SG is well-suited for use in high-speed switching, pulse circuits, and high frequency amplifier chains.
The BF493SG is an NPN transistor with a low noise, wide bandwidth, and low distortion. Its four-layer structure and the operation of the base-emitter and collector-emitter junctions allow current to flow from input to output, amplifying small signals while controlling the current output. With its numerous applications, the BF493SG can prove to be a useful component in many electronic circuit designs.
The specific data is subject to PDF, and the above content is for reference
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