Allicdata Part #: | BF494-ND |
Manufacturer Part#: |
BF494 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANSISTOR RF NPN 20V TO-92 |
More Detail: | RF Transistor NPN 20V 30mA 350mW Through Hole TO-... |
DataSheet: | BF494 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Frequency - Transition: | -- |
Noise Figure (dB Typ @ f): | -- |
Gain: | -- |
Power - Max: | 350mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 67 @ 1mA, 10V |
Current - Collector (Ic) (Max): | 30mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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BF494 is a type of NPN Transistor, frequently referred to as an RF or microwave transistor. It is characterized by low noise, high gain, and high frequency capabilities, making it an ideal choice for a wide variety of RF applications including amplifiers, oscillators, modulators, and mixers.
At a basic level, the BF494 transistor functions in accordance with the principles of bipolar junction transistor (BJT) operation. In this type of transistor, current is controlled by the voltage applied across the base and collector terminals. The operation of a BJT is based on two main principles: the forward and reverse biasing of the collector junction, as well as the saturation effect of the base contact.
In the forward biasing of the transistor, the collector is more positive than the base and the electrons move from the emitter to the collector. This results in a large current flowing from the collector to the emitter, which is regulated by the base current. In the reverse biasing of the transistor, the collector is more negative than the base and the electrons move from the collector to the emitter. This results in a smaller current, since most of the current is blocked by the reverse bias voltage applied to thecollector.
The second operating principle in a BJT transistor is the saturation effect. This effect occurs when the base current exceeds its limit and the collector current starts to become independent of the base current. At this point, the collector current is at its maximum, and the collector-to-emitter voltage is at its minimum. The saturation voltage is usually limited to a very small amount, typically a few volts.
In addition to the two main operating principles of a BJT transistor, the BF494 incorporates additional features that make it ideal for many RF applications. For instance, it has a low noise figure of only 2 dB at 10 GHz and a high gain of 30 dB at 10 GHz. It also has a frequency range that extends from 0.05 GHz to 20 GHz, making it suitable for a wide variety of applications. Furthermore, it has a high breakdown voltage rating of 70 V, ensuring that it can withstand high-voltage conditions without failure. Finally, it has a high cut-off current of 7 mA, making it suitable for applications where power consumption is an important factor.
The BF494 is a versatile device that is suitable for a wide variety of RF applications, such as amplifiers, oscillators, modulators, and mixers. Its low noise figure, high gain, and high frequency capabilities make it an ideal choice for any application where these features are important. Additionally, its high breakdown voltage and cut-off current make it suitable for high-power applications. For these reasons, the BF494 is an important transistor for RF application.
The specific data is subject to PDF, and the above content is for reference
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