BF494_D74Z Allicdata Electronics
Allicdata Part #:

BF494_D74Z-ND

Manufacturer Part#:

BF494_D74Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANSISTOR RF NPN 20V TO-92
More Detail: RF Transistor NPN 20V 30mA 350mW Through Hole TO-...
DataSheet: BF494_D74Z datasheetBF494_D74Z Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: --
Noise Figure (dB Typ @ f): --
Gain: --
Power - Max: 350mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Description

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Transistors, commonly abbreviated as "tran", are electronic devices used as amplifiers, oscillators, switches and as circuitry that perform logic functions. There are two main kinds of transistors - Bipolar Junction Transistors (BJT) and Field Effect Transistors (FET). Both types of transistors have different internal structures and work differently. BJTs have three terminals (collector, base and emitter) and are normally used for power amplifiers, oscillators and logic circuits. Field Effect transistors are more commonly used for applications such as amplifying small signals and switching applications. There is a sub-category of BJTs called RF transistors which are used in radio-frequency applications and are distinguished by their frequency of operation and higher current capabilities.

BF494_D74Z is a RF transistor which belongs to the Bipolar Junction Transistors (BJT) sub-category of transistors. Bf494_D74Z is a epitaxial-base transistor that operates in the frequency range of up to 500MHz making it suitable for use in high frequency applications such as radio and other communication devices. It also has a current gain of 70 and is capable of handling up to 180mA of current which makes it perfect for amplifying small signals with high efficiency.

The working principle of the BF494_D74Z is similar to that of a regular BJT. The transistor has three terminals: the collector (C), the base (B) and the emitter (E). When the base is forward biased, current flows from the collector to the emitter. This current flow causes the collector voltage to increase. To increase the current flowing from collector to emitter, the base current must be increased. This current gain is called the current gain which is determined by the ratio between the collector and emitter currents. When the base current is increased, the collector current increases as well, leading to an increase in the collector voltage.

The BF494_D74Z is used in RF applications because of its high frequency operation and high current capability. It is suitable for use in radio and other communication devices because of its current gain of 70 and its high frequency range. It is also ideal for amplifying small signals and switching applications due to its high current capability and high current gain. The device is also useful in other low power applications such as cell phone radios and FM receivers.

The BF494_D74Z is a RF transistor that can handle up to 180mA of current and has a frequency range of 500MHz. It is suitable for use in high frequency applications such as radio and other communication devices due to its high current gain and high frequency range. It is also perfectly suited to amplifying small signals and switching applications due to its high current capability. The device is also useful in other low power applications such as cell phone radios and FM receivers.

The specific data is subject to PDF, and the above content is for reference

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