Allicdata Part #: | BF888H6327XTSA1-ND |
Manufacturer Part#: |
BF888H6327XTSA1 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH RF 12V 30MA SOT-343 |
More Detail: | RF Mosfet |
DataSheet: | BF888H6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.11670 |
Series: | * |
Part Status: | Active |
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BF888H6327XTSA1 is an RF MOSFET device designed for general-purpose low noise and gain applications. This device has very low noise figure and optimized gain for short range radio applications. The transistor is designed for use in the VHF and UHF frequency bands, in the range of 1.4 MHz to 1000 MHz, for applications such as mobile communication, GPS tracking, garage door remote control, and RFID tags.
The device features low gate-source capacitance and very low gate-drain capacitance that result in excellent RF performance at high frequency. This device has a high-power handling capability with a drain current of up to 600 mA, and a drain-source breakdown voltage of up to 90 V.
The device is implemented using metal opposing-gate FETs (MOTH) technology. This technology combines the advantages of standard MOSFET and HEMT transistor technologies. In this configuration two metal layers form two symmetrical gates that create two separate paths of current, significantly reducing the source-inversion resistance of the device. This dual structure also allows for a higher drain current than traditional MOSFET devices.
The device operates in a common-source configuration, with the gate of the device connected to the input signal, the drain connected to the output and the source connected to ground. In this configuration, when a small electrical signal is applied to the gate, a larger voltage is created at the drain, which amplifies the signal and increases the output power. This configuration is often used in linear amplifiers, radio receivers, and other electrical applications.
The device is designed for operation at ambient temperatures of up to 175°C. Care must be taken to ensure that the device is not exposed to temperatures above its rated values, as this may cause the device to fail.
The device is also designed to withstand relatively high power levels and elevated temperatures. The device has a maximum power dissipation of up to 1 watt, and maximum dissipated power at 25°C of up to 0.5 watts.
BF888H6327XTSA1 is an ideal device for low noise, high gain applications. Its low capacitance and high power handling capabilities make it an ideal choice for high frequency applications in the VHF and UHF frequency bands. The device\'s low noise figure and fast response time also make it well suited for RFID tags, remote controls, and other short range radio applications.
The specific data is subject to PDF, and the above content is for reference
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