BF959

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BF959 is a bipolar junction transistor (BJT) specifically designed to operate in the radio frequency range. It is an NPN silicon planar epitaxial transistor with a minimum collector-emitter voltage of 45V, and a current gain of 20-50. It is typically used in linear or low frequency high power mobile communications applications.
BF959 can be used for both small signal amplification as well as for switching purposes. For example, it can be used in amplifying low power signals in RF transmitters or receivers for mobile communication systems, such as cell phones and pagers. It can also be used for switching circuits in communications systems, where it is used to switch high power signals from one circuit to another without significant signal distortion.

The working principle of BF959 transistor is based on its NPN architecture, in which a layer of N-type semiconductor material is sandwiched between two layers of P-type semiconductor material. The three layers of semiconductor material are commonly referred to as collector, base, and emitter. The transistor consists of two PN junctions, which are formed at the interface of the base and collector, and between the base and emitter.

When a positive voltage is applied to the base, it causes a large number of majority carriers (holes) to be injected from the base into the collector region, resulting in a large current flow (collector current) through the transistor. Conversely, when a negative voltage is applied to the base, the current flow through the transistor is reduced. This reduction in current flow is known as transistor biasing.

The collector current is controlled by the amount of current injected into the base. The amount of current injected into the base can be controlled by controlling the bias voltage applied to the base. This voltage is known as the base-emitter voltage (Vbe). When the base-emitter voltage is increased, more current is injected into the base, and the collector current increases. Conversely, when the base-emitter voltage is decreased, less current is injected into the base, and the collector current decreases.

The gain of the transistor is determined by the ratio of collector current to base current, known as current gain (hFE). Typically, the current gain of BF959 is between 20 and 50. The maximum frequency of the transistor is determined by its capacitance, which is a function of the base width and the voltage swing across the transistor. Generally, the maximum frequency for BF959 is 100MHz.

In summary, BF959 is a bipolar junction transistor specifically designed for radio frequency applications. It is an NPN silicon planar epitaxial transistor with a minimum collector-emitter voltage of 45V and a current gain of 20-50. It can be used for both small signal amplification applications as well as for switching circuits. The gain of the transistor is determined by its current gain, while the maximum frequency is determined by its capacitance.

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