BF959G

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	20V
Frequency - Transition:	700MHz
Noise Figure (dB Typ @ f):	3dB @ 200MHz
Gain:	--
Power - Max:	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 20mA, 10V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package:	TO-92-3
Base Part Number:	BF959

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BF959G Application Field and Working Principle

IntroductionThe BF959G is designed to provide a high-performance solution to the needs of radio frequency (RF) transistors. It is a N-channel depletion-mode field-effect transistor with resistance (Rd) up to 2.5 kΩ, maximum peak current (Imax) of 10A and maximum operating voltage (Vmax) of 500 volts. The package capabilities include small size, low noise, high gain, extremely low distortion and low power consumption. It can be used in RF applications ranging from low-power phases, oscillators, mixers and amplifiers, to high-power broadcast and military communications.Working PrincipleThe BF959G, like other N-channel depletion-mode field-effect transistors, works by manipulating up to two electrical fields, the channel (C) and the gate (G), via two electrical contacts. The channel is a narrow conductive path made from a semiconductor material (such as silicon), and is influenced by the applied G field. When the gate voltage (Vgg) is above a certain threshold, holes in the channel fill up with electrons that allow current to conduct through the channel. When the gate voltage (Vgg) is below the threshold, the channel resistance increases and current stops flowing through the channel.In general, increasing gate voltage (Vgg) lowers the channel resistance and increases the drain current (Id). As the drain current (Id) increases, the drain-source voltage (Vds) rises, which causes a decrease in the drain-source resistance (Rds). This also leads to transistor dissipation, so this effect is usually avoided.The drain current (Id) is dependent upon the applied gate voltage (Vgg). When the voltage difference between the gate and source (Vgs) is less than the transconductance (gfs), the drain current (Id) is low. When the gate voltage (Vgg) is greater than the transconductance (gfs), the drain current (Id) is increased, and the drain-source voltage (Vds) drops.With high-power applications, the drain voltage (Vdd) must be lowered from its normal high-power operating level to a level just above the threshold voltage (Vth) of the device. This prevents the device from dissipating excess heat and extends transistor life.ConclusionThe BF959G is a versatile and effective N-channel depletion-mode field-effect transistor built to provide high-performance solutions to the radio frequency (RF) industry. It provides improved noise levels, high gain, extremely low distortion, and low power consumption. The device works by manipulating the gate and channel fields of the transistor, which in turn controls the drain current and voltage. In applications where excess power is a concern, the drain voltage should be adjusted to just above the threshold voltage of the device in order to extend the life of the transistor.

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