BF959ZL1

Series:	--
Packaging:	Tape & Box (TB)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	20V
Frequency - Transition:	700MHz
Noise Figure (dB Typ @ f):	3dB @ 200MHz
Gain:	--
Power - Max:	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 20mA, 10V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package:	TO-92-3
Base Part Number:	BF959

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Introduction

BF959ZL1 is an RF bipolar junction transistor (BJT) designed in particular for use in microwave oscillator applications from 18 to 200MHz. It has a J-FET input amplifier and a NPN silicon output transistor, which is well suited for medium-power linear, analog applications. The operating temperature range of the BF959ZL1 is -25°C to 75°C.

Application Field

The BF959ZL1 RF bipolar junction transistor is designed for oscillator applications from 18 to 200MHz, and other low-power electronic or microwave applications. It is often used in transmitters and receivers, oscillators, and amplifiers. Additionally, it is also suitable for a variety of digital and analog circuits, including oscillators and choppers, band-pass and multiplexer filters, transformer couplers, and pulse limiting and pulse shaping.

Working Principle

The RF bipolar junction transistor works by creating an electric charge carried by a weak signal and amplifying it as a stronger signal. In RF applications, the transistor is used to amplify a radio frequency signal. The BJT operates by using a base terminal and a collector terminal. The base terminal attracts electrons to it and draws them away from the collector terminal. This results in a differential charge between two circuits.A bias voltage is applied to the base terminal to cause the transistor to “switch on” and regulate the flow of charge from the base to the collector terminal. When the base voltage increases or decreases, the collector current changes so that the collector terminal is now able to drive larger loads than it can from the base.The weak signal applied to the base terminal is amplified by the current flowing between the base and collector terminals, which is regulated by the control voltage. The amplified current is then passed through an external load, such as an amplifier or a radio antenna.

Conclusion

The BF959ZL1 RF bipolar junction transistor is an excellent choice for applications requiring low-power, large-signal amplification of radio frequency signals. It is small and cost-effective, while still offering excellent signal-to-noise characteristics and wide output power range. Furthermore, its NPN silicon output transistor is more reliable and efficient than other BJT designs, making it well suited for use in analog circuits and devices.

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