Allicdata Part #: | BF959RL1G-ND |
Manufacturer Part#: |
BF959RL1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS RF NPN 20V 100MA TO-92 |
More Detail: | RF Transistor NPN 20V 100mA 700MHz 625mW Through H... |
DataSheet: | BF959RL1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Frequency - Transition: | 700MHz |
Noise Figure (dB Typ @ f): | 3dB @ 200MHz |
Gain: | -- |
Power - Max: | 625mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 20mA, 10V |
Current - Collector (Ic) (Max): | 100mA |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | BF959 |
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BF959RL1G is a NPN Silicon RF transistor from NXP Semiconductor, originally developed by Philips. It is a 9 GHz high frequency and low noise amplifier transistor, designed to be operated in CW, and pulsed mode. It has a maximum average power output of 20 dBm, a minimum noise figure of 1.0 dB and a gain of 15dB at 4GHz.
The BF959RL1G is designed primarily for application in mobile phone systems, providing gain in the transmission path. The device is suitable for use in receivers, low noise amplifiers, oscillators, modulators, active filters, and pulse modulators, in the VHF, UHF and other microwave frequency bands.
The BF959RL1G features a low stray capacitance diode connected collector, a wide dynamic range, and excellent microwave performance. The transistor is coated in a hermetically sealed metal ceramic package, making it ideal for use in high-performance RF applications.
Working principle of the BF959RL1G is based on the NPN architecture. It is a bipolar junction transistor (BJT) in which the base-collector voltage is used to control the current flow from the emitter to the collector. The base-emitter junction allows current flow from the emitter to the base, while the base-collector junction allows current flow from the collector to the base. This type of device is generally used in high-frequency applications, where it can provide good gain and low noise performance. The BF959RL1G has a gain bandwidth product of 3.2GHz, allowing it to be used in both narrow- and wide-band amplifiers.
The main advantage of using the BF959RL1G as an RF amplifier is its high gain, low noise figure and low distortion. The device has an excellent frequency response; it has very good intermodulation properties and can operate in both linear and saturated modes.
The BF959RL1G is easy to integrate into a circuit and its components can be used to build complex and sophisticated amplifiers. It is suitable for use in both narrow and wide band applications. With its low noise figure and excellent gain, the device offers excellent performance for mobile phone systems, as well as other high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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