Allicdata Part #: | BFP520E6327BTSA1TR-ND |
Manufacturer Part#: |
BFP520E6327BTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS NPN RF 2.5V SOT-343 |
More Detail: | RF Transistor NPN 3.5V 40mA 45GHz 100mW Surface Mo... |
DataSheet: | BFP520E6327BTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 3.5V |
Frequency - Transition: | 45GHz |
Noise Figure (dB Typ @ f): | 0.95dB @ 1.8GHz |
Gain: | 24dB |
Power - Max: | 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 20mA, 2V |
Current - Collector (Ic) (Max): | 40mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-82A, SOT-343 |
Supplier Device Package: | PG-SOT343-4 |
Base Part Number: | BFP520 |
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Transistors, particularly those of the RF variety, have been in widespread use for decades now, and one example of such a transistor is the BFP520E6327BTSA1. These transistors are particularly popular when it comes to applications that require high frequencies, such as in wireless communication systems. In this article, we shall take a look at the main application fields and working principles of the BFP520E6327BTSA1.
BFP520E6327BTSA1 Application Fields and Working Principles
The BFP520E6327BTSA1 is commonly used in RF applications that require high frequencies, such as transmitters and receivers for wireless communication systems. These transistors are also widely used in microwave applications that require higher power levels. Additionally, the BFP520E6327BTSA1 transistors are also well-suited for low-noise amplifier (LNA) circuitry, linear amplification, and switching.
One of the most beneficial features of the BFP520E6327BTSA1 transistor is its RF performance, which allows it to effectively handle frequencies of up to 6GHz. It also has a maximum collector-emitter voltage (Vce) of 100V, and its maximum collector current (Ic) of 30mA makes it well-suited for high-power applications. In addition to these features, the BFP520E6327BTSA1 offers excellent noise figures, making it an ideal choice for low-noise circuitry.
In terms of its working principle, the BFP520E6327BTSA1 transistor has two pnp bipolar transistors that are connected back-to-back. This allows it to act as a voltage amplifier, which can be used to amplify a small input voltage to a much larger output voltage. The two transistors can also be used to switch current in a circuit, or used to boost the power of a RF signal. In addition, the BFP520E6327BTSA1 also has an internal thermistor to protect the transistor against thermal runaway.
The BFP520E6327BTSA1 transistor is a popular choice for many RF applications due to its high power level, high frequency performance, and low noise figure. Its wide range of application fields and working principles make it an ideal choice for many applications. Furthermore, the transistor\'s ability to protect itself against thermal runaway makes it particularly impressive.
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