BFP540E6327BTSA1 Allicdata Electronics

BFP540E6327BTSA1 Discrete Semiconductor Products

Allicdata Part #:

BFP540E6327BTSA1TR-ND

Manufacturer Part#:

BFP540E6327BTSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANSISTOR RF NPN 4.5V SOT-343
More Detail: RF Transistor NPN 5V 80mA 30GHz 250mW Surface Moun...
DataSheet: BFP540E6327BTSA1 datasheetBFP540E6327BTSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Gain: 21.5dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: PG-SOT343-4
Base Part Number: BFP540
Description

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The BFP540E6327BTSA1 is an NPN silicon RF transistor designed for use in various radio frequency (RF) applications. It is a type of bipolar junction transistor (BJT) designed to work in environments that require high power gain, wide bandwidth, and low noise. The BFP540E6327BTSA1 is a high-performance design that can be used in many different applications, including mobile systems, fixed wireless-access systems, GPS, HAM radio, and other communication systems.

The BFP540E6327BTSA1 is capable of providing high frequency gain and noise figures that are suitable for a variety of RF applications. The transistor has a wide frequency range of 0.1 to 2 GHz, with 12dB minimum gain and an output power of 1.8 Watts. The BFP540E6327BTSA1 is designed to deliver high linearity, high 2nd and 3rd order intercepts, and low noise figures in diverse environments. Its multi-mode design enables the transistor to work in multiple environments.

The BFP540E6327BTSA1 features a high gain-bandwidth product of 12 GHz, excellent return losses across the entire frequency range, and a stable linear response at higher power levels. It is also capable of providing reliable operation at temperatures up to 170 °C. The device also has a low gate-source capacitance, which helps to reduce the current leakage and unwanted noise.

The BFP540E6327BTSA1 is a low-noise device and offers low-noise performance and low phase noise at high frequencies. The transistor\'s advanced design technology and high-quality materials help ensure excellent gain flatness and linearity. The transistor also has high immunity to reverse bias, which allows it to handle higher input signal levels without distortion. With a maximum collector-emitter voltage of 6V and gate-source voltage of 8V, the BFP540E6327BTSA1 is ideal for operation in various environments.

The BFP540E6327BTSA1 is suitable for use in applications that require a low-power, low-noise transistor. It is also capable of delivering high frequency gain and excellent noise figures when used in RF equipment. The device can be used in transmitters, receivers, amplifiers, oscillators, mixers, converters, and other high-frequency circuits. It is also suitable for use in low-frequency applications such as mixers, switches, and local oscillators.

The BFP540E6327BTSA1 is a versatile device with a wide range of applications. It is suitable for use in communication systems, navigation systems, industrial systems, test and measurement equipment, and more. It is also suitable for use in high-power and phase-noise circuits.

In conclusion, the BFP540E6327BTSA1 is a high-performance transistor designed for use in radio frequency applications. It is capable of delivering high frequency gain and low noise figures in a variety of applications. The device offers excellent performance across a wide frequency range, and is suitable for use in a wide range of applications. With its advanced design technology and high-quality materials, the BFP540E6327BTSA1 is an ideal choice for RF applications.

The specific data is subject to PDF, and the above content is for reference

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