Allicdata Part #: | BFP520FH6327XTSA1TR-ND |
Manufacturer Part#: |
BFP520FH6327XTSA1 |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANS RF NPN 3.5V 40MA 4TSFP |
More Detail: | RF Transistor NPN 3.5V 40mA 45GHz 100mW Surface Mo... |
DataSheet: | BFP520FH6327XTSA1 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.09765 |
6000 +: | $ 0.09135 |
15000 +: | $ 0.08505 |
30000 +: | $ 0.08064 |
75000 +: | $ 0.07875 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 3.5V |
Frequency - Transition: | 45GHz |
Noise Figure (dB Typ @ f): | 0.95dB @ 1.8GHz |
Gain: | 22.5dB |
Power - Max: | 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 20mA, 2V |
Current - Collector (Ic) (Max): | 40mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-SMD, Flat Leads |
Supplier Device Package: | 4-TSFP |
Base Part Number: | BFP520 |
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The BFP520FH6327XTSA1 is a bipolar transistor optimized for use in radio-frequency (RF) amplifiers. It is specially designed for use in low noise applications, such as wireless communication systems, where low noise performance is essential. The BFP520FH6327XTSA1 is a 50-volt, NPN, RF bipolar transistor with a maximum collector current of 500 mA and a maximum frequency of 8 GHz.
The BFP520FH6327XTSA1 is used for amplification purposes in a wide variety of applications, such as amplifying radio signals, Bluetooth applications and wireless networks. It is also used in amplifiers for other wireless applications, including GPS systems, Wi-Fi and cellular communication systems.
The BFP520FH6327XTSA1 transistor has a high gain-bandwidth product (fT) of 10 GHz, which is much higher than many other transistors in the same category. This enables the transistor to be used in applications where high frequency response and high gain are required. Additionally, the high fT of the transistor means that it is also suitable for use in low noise amplifier (LNA) applications. The high fT also provides a better signal-to-noise ratio (SNR) for applications that require high SNR performance.
The working principle of the BFP520FH6327XTSA1 is based on a junction between two regions of semiconductor material that form a reverse-biased PN junction. When the transistor is connected to a power supply, the electric current flows through the base-emitter junction, creating a smaller current that is amplified as it passes through the collector-emitter junction. This process is known as minority carrier injection, and it is this process that enables the transistor to amplify a small current into a larger one. This amplified current can then be used to drive a speaker, or an RF amplifier circuit.
The BFP520FH6327XTSA1 is an ideal choice for a variety of applications due to its low noise performance, high gain-bandwidth product and high frequency response. It is especially suitable for use in wireless communication systems, Bluetooth and Wi-Fi applications, and GPS systems, as well as any other application that requires a low noise and high gain transistor. Additionally, the BFP520FH6327XTSA1 is also able to be used as an amplifier in low noise amplifier (LNA) applications, where the high fT provides a better signal-to-noise ratio for applications requiring high SNR performance.
The specific data is subject to PDF, and the above content is for reference
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