BFP540ESDE6327HTSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BFP540ESDE6327HTSA1 is a type of transistor known as an RF Bipolar Junction Transistor (BJT). It is designed to work with very high frequencies of between 0.05MHz and 3000MHz and has a very low noise figure, making it suitable for use in a wide range of applications, particularly in a radio frequency system.

At the heart of this transistor is a pair of NPN transistors joined together to form an N+P+N sandwich configuration. This configuration is designed to amplify incoming signals and provide a greater output power than a single transistor. The special design of the NPN transistors means that they have very low capacitance, making them ideal for use in high frequency circuits. The BFP540ESDE6327HTSA1 has a maximum collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA.

The BFP540ESDE6327HTSA1 is most commonly used in radio frequency applications such as satellite television receivers, FM radio receivers, amateur radio amplifiers, and CATV amplifiers. The transistor is especially suited for use as a local oscillator in amateur radio amplifiers due to its low noise figure, high efficiency, and its ability to handle high frequencies. This makes it perfect for use in medium power amplifiers where high performance is required.

The working principle of the BFP540ESDE6327HTSA1 is based on the principles of transistor switching. When a voltage is applied to the base of the transistor, it causes a current to flow between the emitter and collector. This current is then amplified and the amplified signal is then output to the load. The amplification of the signal is a result of the base being charged, which causes a current to flow through the collector and emitter, creating a larger current than what was originally applied.

The BFP540ESDE6327HTSA1 is very reliable and is widely used for a variety of applications. It has a low noise figure, high efficiency and is able to handle high frequencies, making it perfect for radio-frequency applications. Furthermore, it has a maximum collector current of 200mA, making it suitable for use with medium power amplifiers. This makes the BFP540ESDE6327HTSA1 a great choice for anyone looking for a reliable transistor to use in their radio frequency system.

The specific data is subject to PDF, and the above content is for reference