BFP720ESDH6327XTSA1 Allicdata Electronics
Allicdata Part #:

BFP720ESDH6327XTSA1TR-ND

Manufacturer Part#:

BFP720ESDH6327XTSA1

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS RF NPN 43GHZ 4.7V SOT343
More Detail: RF Transistor NPN 4.7V 30mA 43GHz 100mW Surface Mo...
DataSheet: BFP720ESDH6327XTSA1 datasheetBFP720ESDH6327XTSA1 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.12206
6000 +: $ 0.11419
15000 +: $ 0.10631
30000 +: $ 0.10080
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 43GHz
Noise Figure (dB Typ @ f): 0.55dB ~ 1.55dB @ 150MHz ~ 10GHz
Gain: 11dB ~ 30.5dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 15mA, 3V
Current - Collector (Ic) (Max): 30mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343
Base Part Number: BFP720
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors are one of the most important components in many electronic and communication systems. In particular, RF Bipolar transistors are vital in many areas such as amplifiers, oscillators, logic gates and RF signal processing. The BFP720ESDH6327XTSA1 is an RF Bipolar transistor, most commonly used for high-power applications like amplifiers, PA stages, and oscillators.

The BFP720ESDH6327XTSA1 is an n-p-n type, as opposed to a p-n-p type which is more common in other areas. The device consists of three terminals; the collector, the base, and the emitter. The collector is an electric charge carrier that passes current to the emitter in the presence of a voltage. The base is a control terminal and supplies a current, which controls the flow of charge carriers from the collector to the emitter. When current is applied to the base, the electric charge carried by the collector is passed to the emitter.

The BFP720ESDH6327XTSA1 is designed for high-power usage, such as those found in amplifiers, PA stages, and oscillators. It has been designed with an optimized structure to provide maximum power output and to reduce power dissipation. It offers excellent gain, stability, and low noise characteristics, making it ideal for many communication products. It is also capable of switching high-speed signals up to 1.5GHz without distortion, and offers a high current rating with low voltage drop.

The BFP720ESDH6327XTSA1 has a wide range of uses in commercial, industrial, and military applications. It can be used in radio receivers, power amplifiers, RF transceivers, and other wireless communication products. In addition, it can be used in high-end audio equipment, automotive test systems and power supplies. Furthermore, it can be used in data acquisition, motor control systems, and home/building automation.

The BFP720ESDH6327XTSA1 is a very versatile component with a wide range of applications. Its features make it an ideal choice for high-power, high-frequency RF applications. Its optimized structure allows for maximum power output with minimum power dissipation; and its high-speed switching capabilities make it suitable for many RF applications. In addition, its low voltage drop and high current rating make it an ideal choice for industrial, commercial, and military applications.

In conclusion, the BFP720ESDH6327XTSA1 is a robust, high-performance RF bipolar transistor. It is an excellent choice for high-power, high-frequency applications, as it is capable of delivering optimal performance at both low and high power levels. The device also offers excellent gain, stability, and low noise characteristics, making it ideal for many applications in commercial, industrial, and military communication products.

The specific data is subject to PDF, and the above content is for reference

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