BFP720FH6327XTSA1 Allicdata Electronics
Allicdata Part #:

BFP720FH6327XTSA1TR-ND

Manufacturer Part#:

BFP720FH6327XTSA1

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: TRANS RF NPN 45GHZ 3.5V TSFP-4
More Detail: RF Transistor NPN 4.7V 25mA 45GHz 100mW Surface Mo...
DataSheet: BFP720FH6327XTSA1 datasheetBFP720FH6327XTSA1 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.11425
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.7V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
Gain: 10.5dB ~ 28dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
Current - Collector (Ic) (Max): 25mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Flat Leads
Supplier Device Package: 4-TSFP
Base Part Number: BFP720
Description

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BFP720FH6327XTSA1 transistors are small signal NPN transistors commonly used in RF applications. They are also known as Ge-PNP BJTs, or small signal NPN Bipolar Junction Transistors (BJT). This device has a maximum power dissipation of 1.5 W and is available in three different packages (TO-92, SOT-23, and SOT-323), allowing users to choose the most appropriate package for their application.

The BFP720FH6327XTSA1 transistors were designed for use in RF circuits, due to their high frequency characteristics, low noise figure, and low DC current gain. They are primarily used in wireless communication equipment, including telephones, cellular telephones, wireless LANs, microwave radios, and satellite radios. The transistors are also used in industrial, automotive, and consumer radio frequency products, such as low noise amplifiers, oscillators, modulators, and limiters.

The basic working principle of the BFP720FH6327XTSA1 transistors involves the flow of electrons and holes, between the emitter and base of the device. When a voltage is applied to the base, electrons move away from the emitter, adding current to the base and allowing the collector to draw current from the emitter. The amount of current that can flow from the collector to the emitter is known as the collector current, and is controlled by the current gain of the device, which is determined by the relationship between the base current and the collector current. The current gain, also known as the alpha ratio, can range from about 30 to 200 for this type of transistor.

The BFP720FH6327XTSA1 transistors are ideal for use in RF amplifier circuits, due to their high breakdown voltage and frequency response. They can also be used as second-stage amplifiers with amplifier gain and power efficiency. When combined with the appropriate matching circuitry, the BFP720FH6327XTSA1 transistors can provide the desired gain, noise figure, and linearity. Additionally, these transistors have excellent temperature stability, ensuring reliable operation over a wide temperature range.

The BFP720FH6327XTSA1 transistors have been tested and have proven to be reliable and durable over a wide range of frequencies. This device is also well suited for use in environment or laboratory tests due to its low power dissipation and small footprint. These transistors are available from many electronic component distributors, making them a cost-effective solution for RF applications.

The specific data is subject to PDF, and the above content is for reference

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