BFP760H6327XTSA1 Discrete Semiconductor Products

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The BFP760H6327XTSA1 is a special type of transistor specifically designed for radio frequency (RF) applications. It is a 50 V NPN RF transistor with a maximum fT of 27 GHz. This makes it ideal for applications such as microwave radio amplifiers and transmitters. It operates with a 0.9V base-emitter voltage and its maximum collector current is 25 mA. The BFP760H6327XTSA1 has a breakdown voltage of 98V and a typical noise figure of -1dB.

The operating principle of an NPN transistor such as the BFP760H6327XTSA1 can be described as follows. A transistor consists of three layers of semiconductor material: the emitter, the base and the collector. When a voltage is applied to the base of the transistor, a small electric current flows through the base-emitter junction. This current causes the depletion region to increase, thereby reducing the electrical resistance of the base. This, in turn, allows the collector-emitter junction to become ective and a larger current is able to flow from collector to emitter. Thus, when the base voltage is increased, the collector current linearly increases with the voltage at the base.

The BFP760H6327XTSA1 is a reliable and powerful transistor designed for radio frequency applications. It is ideal for use in radio transmitters and amplifiers and has a significantly higher fT than standard NPN transistors. It can also be used in other RF applications such as oscillators and filters. The BFP760H6327XTSA1 offers excellent performance in terms of its linearity, low noise figure, and breakdown voltage. It is also highly reliable and has a long operating life, making it an excellent choice for RF applications.

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