BFP720FESDH6327XTSA1

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The Transistor BFP720FESDH6327XTSA1 is a NPN RF Bipolar junction transistor (BJT) specifically designed for radio frequency (RF) applications.

This device is manufactured in an 8-pin dual-in-line-package (DIP) and provides a large current gain with excellent gain control, stability, and low noise figure. It requires very low voltage, can be used across a wide range of frequencies, and is ideal for high gain amplifiers and switches with high efficiency.

BFP720FESDH6327XTSA1 is especially suited for pulsed, switched applications demanding low off-state-currents of up to five microamperes, wide dynamic range of current control, and high gain control. It offers a high degree of flexibility in biasing and low-noise applications, making it ideal for high frequency, low noise applications such as GSM, WiFi, LTE, 3G, and CDMA systems.

The transistor is constructed similarly to standard NPN BJTs, with three regions of positive and negative charge carriers. It has an emitter-base region, a base-collector region, and a collector-emitter region. In NPN transistors, the negative charge carriers are electrons, which are injected from the emitter region and are collected by the collector. As electrons cross from the emitter to the collector, they generate a current, which is a result of the transistor\'s gate control. When the gate voltage is switched between a positive and negative voltage, the current generated by the electrons is controlled.

The BFP720FESDH6327XTSA1 has superior performance parameters due to its unique design. Its emitter-base region is specifically built to provide a wide range and extended performance of gain control. Additionally, it features an integrated output resistor, optimized for improved noise and linearity, special design of the collector, base-collector isolations, very low on-state resistance, and extremely low coupling capacitance.

The collector-emitter region of the BFP720FESDH6327XTSA1 is optimized for maximum power transfer, while its base-collector region features double p-type well isolation technology which achieve high breakdown voltages, wide dynamic range of current control, and improved reverse leakage resistance. Finally, its base-emitter region is tuned for low-noise performance and a low voltage supply for bias current.

In terms of its application field, the BFP720FESDH6327XTSA1 is usually used for radio frequency applications such as GPS and tracking systems, radio receivers and transmitters, infrared remote control, frequency mixer, and high gain RF power amplifiers. It is suitable for an operating supply voltage range from 3V up to 18V, and it has an operating frequency range from 100MHz up to 3GHz.

In summary, the BFP720FESDH6327XTSA1 is a NPN RF Bipolar Junction Transistor (BJT) specifically designed for radio frequency applications. It offers low off-state currents, wide dynamic range of current control, and high gain control, making it ideal for GPS and tracking systems, radio receivers and transmitters, and high gain RF power amplifiers.

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