BFQ67,215

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	1.3dB ~ 3dB @ 1GHz ~ 2GHz
Gain:	--
Power - Max:	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 15mA, 5V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Base Part Number:	BFQ67

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Introduction

BFQ67,215 transistors are advanced, high gain, wide frequency range, and high-performance devices. These transistors are designed for transistor radio frequencies and other important applications. The purpose of this article is to provide a brief overview of the application field and working principle of the BFQ67,215 Transistor.

Application Field

BFQ67,215 transistors provide improved performance for highly integrated, low-cost circuits in applications such as transistor radios, amplifiers, television sound systems, cellular base station power modules and other RF and IF systems. Due to their enhanced stability and high gain, BFQ67,215 transistors are well suited for power amplifiers, oscillators and all types of low-noise amplifiers. Additionally, these transistors are also ideal for applications that require high-linearity and low distortion.

Working Principle

BFQ67,215 transistors utilize a vertical structure of two thin NPN epitaxial layers surrounded by a thick base layer and a thick collector layer. This structure allows the transistor to fully utilize the power amplification and linearity benefits of the epitaxial layer. A vertical structure also offers improved electromagnetic interference performances. By using an active surface up to five times larger than conventional transistors, these transistors can realize high gain for their size and in comparison to their competitors. The transistor’s functional performance is further enhanced by the elimination of the need for additional resistors in the collector circuit. Additionally, the transistor’s built-in base resistor reduces power consumption, increases signal gain and reduces the size of the external circuit. These characteristics make BFQ67,215 transistors an ideal choice for power and linearity applications.

Conclusion

In conclusion, BFQ67,215 transistors are an ideal choice for power and linearity applications due to their advanced, high gain, wide frequency range, and high-performance capabilities. Their vertical structure offers improved electromagnetic interference performances and their built-in base resistor reduces power consumption and increases signal gain. With these features, BFQ67,215 transistors are perfect for transistor radios, amplifiers, television sound systems, and cellular base station power modules.

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