Allicdata Part #: | 568-6202-2-ND |
Manufacturer Part#: |
BFQ67W,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | TRANS NPN 10V 20MA 8GHZ SOT323 |
More Detail: | RF Transistor NPN 10V 50mA 8GHz 300mW Surface Moun... |
DataSheet: | BFQ67W,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 10V |
Frequency - Transition: | 8GHz |
Noise Figure (dB Typ @ f): | 1.3dB ~ 3dB @ 1GHz ~ 2GHz |
Gain: | -- |
Power - Max: | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 15mA, 5V |
Current - Collector (Ic) (Max): | 50mA |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323-3 |
Base Part Number: | BFQ67 |
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The BFQ67W,115 is a bipolar radio frequency (RF) transistor that is commonly used in applications such as amplifying, switching, and low noise amplification. It is an NPN transistor, which means it has three leads in a triangular configuration and is used in many electronic circuits. The primary use for the BFQ67W,115 is RF amplification in cellular phones, satellite radios, and many other applications that require amplification in the radio frequencies.
The BFQ67W,115 typically operates within a frequency range of DC up to 3GHz, making it suitable for modern wireless technologies. It is also capable of providing relatively high linear power gains with low power consumption through its high output power capability and 47dB Gain @ 900MHz. Its high gain and low noise figure make the BFQ67W,115 an excellent choice for designers looking to provide dependable RF performance in a variety of applications.
In terms of its working principle, the BFQ67W,115 is an NPN transistor which is designed to amplify and/or switch small electrical signals. It works by using the small electrical signal that is applied to the base lead – which acts as a “gate” – to control the larger current that flows in the collector and emitter leads. By controlling the flow of current through the transistor, you can use the BFQ67W,115 to amplify the input electrical signal that is applied.
For example, the BFQ67W,115 could be used to amplify a low frequency radio signal to a higher frequency that can be picked up by a receiver. In this case, the input signal of the radio frequency is applied to the base (gate) and the transistor amplifies it so that the output receives a larger RF signal which is picked up by the receiver. The same principle can be applied to other applications, such as amplifying an audio signal in a stereo system.
The BFQ67W,115 is a versatile and reliable transistor for applications requiring RF amplification, making it a common choice for a variety of projects. And with its impressive linear power gains and 47dB gain @ 900MHz, it is well suited for amplifier designs, as well as low noise amplifiers. The BFQ67W,115 is also relatively easy to use, allowing designers of all levels to reap its benefits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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BFQ67W,115 | NXP USA Inc | 0.0 $ | 1000 | TRANS NPN 10V 20MA 8GHZ S... |
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