BFQ67W,135

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	10V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	1.3dB ~ 3dB @ 1GHz ~ 2GHz
Gain:	--
Power - Max:	300mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 15mA, 5V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323-3
Base Part Number:	BFQ67

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Introduction to BFQ67W,135 Transistors

BFQ67W,135 is a type of transistor belonging to the family of bipolar junction transistors (BJT) that is specially designed for radio-frequency (RF) purposes. Its RF characteristics are excellent and it is mainly used in the amplification of signals.

Structure

The common BJT is composed of three terminals, called emitter, collector and base. Those of the BFQ67W,135 are respectively labelled P, Z and E. The device also includes an integrated E-Z diode and a Zener diode to protect the collector. These passive components are essential to the device’s normal functioning.

Main Characteristics

The transistor’s main characteristics – stability, gain and others – can be manipulated by properly controlling the maximum breakdown voltage, the collector-emitter and collector-base saturation voltages and the maximum thermal dissipation. According to the manufacturer’s datasheet, the BFQ67W,135 transistor has 25V’s maximum voltage, 3V’s collector-emitter saturation voltage, 5V’s collector-base saturation voltage and a dissipation of 140 mW.

Working Principle

A BJT works by applying an input current on its base terminal, which triggers the transistor action and allows current to flow from the collector to the emitter. The forward current gain, or β, of a BJT is calculated by dividing the current of the collector by that of the emitter.In the case of a BFQ67W,135, the current between its emitter and collector mostly depends on the voltage applied to its base. The higher this voltage is, the faster the current increases. This allows for precise control over the speed at which the current changes.

Applications

Due to its excellent RF characteristics, the BFQ67W,135 transistor is widely used in applications such as radio transmission and reception, broadcasting, computer and telecom components and HF amplifiers. It is often used in professional audio systems and electronic musical instruments as an amplifier for low-frequency signals.

Conclusion

By providing superior RF characteristics and an integrated E-Z diode and a Zener diode for protection, the BFQ67W,135 is an invaluable transistor for many professional audio applications and radio-frequency communication. Its base-controlled current flow makes it easy to use and is a testament to its versatility.

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