BG3430RE6327HTSA1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	2 N-Channel (Dual)
Frequency:	800MHz
Gain:	25dB
Voltage - Test:	5V
Current Rating:	25mA
Noise Figure:	1.3dB
Current - Test:	14mA
Power - Output:	--
Voltage - Rated:	8V
Package / Case:	6-VSSOP, SC-88, SOT-363
Supplier Device Package:	PG-SOT363-6

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<p> Today’s semiconductor devices are utilized in an increasingly wide variety of applications, ranging from consumer electronics and medical equipment to communications and military applications. One of the most common types of semiconductor devices is a FET, or field-effect transistor. A FET such as the BG3430RE6327HTSA1 operates under the same principle as a conventional bipolar junction transistor, and is capable of amplifying small signals like a BJT. </p><p>The BG3430RE6327HTSA1 is a high-performance, high-frequency N-Channel MOSFET, featuring a drain-to-source voltage rating of 24V and a drain current of up to 9mA, making it an ideal choice for a range of RF and microwave applications. It is constructed of a combination of silicon and metal layers, including a gate, source, drain and substrate. </p><p>The working principle of a FET is based on controlling the flow of current across a conductive path. The FET consists of an input, a drain, and a gate terminal. When voltage is applied to the input terminal, a ‘channel’ is formed, which allows electrons to pass through the device from the source to the drain. When voltage is applied to the gate, the ‘channel’ is broken, and the current flow stops. The FET is governed by the principle of ‘gate control’, which requires that the gate be controlled to direct and control the current flow. The gate control makes it possible to accurately control the current with great precision. </p><p>The BG3430RE6327HTSA1 is suited for many RF and microwave applications, including power amplifiers, high frequency matching networks, antenna matching, and low noise amplifiers. Its superior performance is due to its low leakage current and low threshold voltage, as well as its low distortion, low noise and high linearity characteristics. Additionally, its low thermal resistance and fast switching times make it an ideal choice for fast data applications. The BG3430RE6327HTSA1 is also suitable for a wide range of signal processing applications, from signal modulation to signal demodulation.</p><p>In summary, the BG3430RE6327HTSA1 is a high-performance high-frequency N-Channel MOSFET, offering superior performance and reliability in RF and microwave applications. It is designed with a combination of silicon and metal layers, and works on the principle of gate control, allowing for the precise control of current flow. As a result, the BG3430RE6327HTSA1 is suitable for a wide variety of signal processing applications.</p>

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