BGM1014,115 RF/IF and RFID |
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Allicdata Part #: | 568-2077-2-ND |
Manufacturer Part#: |
BGM1014,115 |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | NXP USA Inc |
Short Description: | MMIC AMPLIFIER 6TSSOP |
More Detail: | RF Amplifier IC ISM 0Hz ~ 2.2GHz 6-TSSOP |
DataSheet: | BGM1014,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Frequency: | 0Hz ~ 2.2GHz |
P1dB: | 12.5dBm ~ 12.9dBm |
Gain: | 31.5dB ~ 33dB |
Noise Figure: | 4.2dB ~ 4.3dB |
RF Type: | ISM |
Voltage - Supply: | 5 V ~ 6 V |
Current - Supply: | 17mA ~ 25mA |
Test Frequency: | 1GHz |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | 6-TSSOP |
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RF Amplifiers play a key role in modern communication systems. Many of them use BGM1014,115, a bipolar transistor from STMicroelectronics, as amplifying device. This article will discuss the application fields and working principles of BGM1014,115.
Application Fields
The BGM1014,115 is used in various applications, from high power RF amplifiers used in broadcast transmitters to low power amplifiers in consumer electronic products, such as wireless headsets. This wide variety of applications is possible because of its high gain capabilities and wide power range.
The BGM1014,115 has been especially successful in applications requiring higher power, such as broadcast transmitters. It offers high gain and wide dynamic range, enabling higher power with minimal distortion. In addition, it’s low power consumption makes it suitable for power-sensitive applications.
Operating Principle
The BGM1014,115 is an N-channel bipolar transistor, which means it is composed of two different types of semiconductors: an N-type and a P-type. The N-channel is where the current flows when it is turned on and the P-type is where the current flows when it is turned off.
It works by controlling the amount of current that flows between two terminals. When a voltage is applied to the base of the transistor, the current flowing through the transistor increases. This increase in current is called amplified gain. The gain of the transistor is determined by the ratio between the current at the base and the current at the collector.
The BGM1014,115 has a very high gain, which means it is very efficient in its use of power. This makes it suitable for applications with low power requirements, where efficiency is important. It also has a wide frequency range, so it can be used in applications that require different frequencies.
Conclusion
The BGM1014,115 is a versatile and powerful transistor that is suitable for a wide range of applications. It offers high gain, low power consumption, and wide frequency range, making it a great choice for a variety of RF amplifier applications. Its efficient use of power makes it suitable for power-sensitive applications, while its high gain makes it ideal for applications requiring higher power.
The specific data is subject to PDF, and the above content is for reference
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