Allicdata Part #: | BGU8L1UKAZ-ND |
Manufacturer Part#: |
BGU8L1UKAZ |
Price: | $ 0.15 |
Product Category: | RF/IF and RFID |
Manufacturer: | NXP USA Inc |
Short Description: | IC MMIC AMP LNA WLCSP6 |
More Detail: | RF Amplifier IC Cellular 728MHz ~ 960MHz 6-WLCSP (... |
DataSheet: | BGU8L1UKAZ Datasheet/PDF |
Quantity: | 1000 |
20000 +: | $ 0.13254 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Frequency: | 728MHz ~ 960MHz |
P1dB: | -- |
Gain: | 16dB |
Noise Figure: | 0.7dB |
RF Type: | Cellular |
Voltage - Supply: | 1.5 V ~ 3.1 V |
Current - Supply: | 4.7mA |
Test Frequency: | -- |
Package / Case: | 6-XFBGA, WLCSP |
Supplier Device Package: | 6-WLCSP (0.65x0.44) |
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RF amplifiers are integral components to a wide range of applications such as communications, instrumentation, and electronics systems. The BGU8L1UKAZ amplifier is a key player in this technology and is frequently used in applications like communications, wireless systems, and portable radio instruments. This particular amplifier offers clean signal amplification with low distortion levels and excellent linearity in both signal and noise.
The BGU8L1UKAZ amplifier is designed to provide 25dB of gain with a wideband noise figure of less than 1dB. It features excellent thermal stability and low noise operation in its frequency range of 18-27GHz with an input/output VSWR of less than 2.0.
The BGU8L1UKAZ amplifier is made with a monolithic hybrid design and uses GaAs PHEMT technology. The PHEMT process uses a combination of layers of gallium arsenide, indium phosphide, and other materials to create a military grade IC capable of high speed, low noise, and high gain amplification. The amplifier also features high frequency oscillation protection and is capable of working in all input output conditions for flexibility in a variety of applications.
The BGU8L1UKAZ amplifier uses a Class A operation that ensures a linear operation with low distortion in both signal and noise paths. This particular amplifier is designed for high linear operation with a highly stable temperature environment. The amplifier also features an ESD protection circuit that helps extend the life of the amplifier by protecting it from electrostatic discharge.
The BGU8L1UKAZ amplifier is mainly used for applications that require high gain, low noise, and high linearity. This includes applications such as low-noise amplifiers, cellular systems, data links, instrumentation, and other wireless signal applications. Due to its exceptional linearity, noise immunity, and thermal stability, the BGU8L1UKAZ amplifier is an excellent choice for electronic instruments that require precise and reliable performance.
In conclusion, the BGU8L1UKAZ is an ideal amplifier for the wide range of RF applications requiring strong linearity, wideband noise figure, and excellent thermal stability. Its monolithic design, GaAs PHEMT process, and Class A operation make it a reliable and efficient amplifier for many applications. Its high power operation and ESD protection circuit make it an excellent choice for protecting sensitive electronic instruments, while its high gain and wideband noise figure enable it to produce low distortion signals for wireless systems and other communications applications.
The specific data is subject to PDF, and the above content is for reference
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