BGU8L1X RF/IF and RFID

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Frequency:	728MHz ~ 960MHz
P1dB:	-3dBm
Gain:	14.5dB
Noise Figure:	0.7dB
RF Type:	LTE, WiMax
Voltage - Supply:	1.5 V ~ 3.1 V
Current - Supply:	4.6mA
Test Frequency:	880MHz
Package / Case:	6-XFDFN
Supplier Device Package:	6-XSON, SOT1232 (1.1x0.7)

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RF Amplifiers: BGU8L1X application field and working principle

The BGU8L1X is an LDMOS Smart Bias Class AB Bipolar transistor RF amplifier. It is a highly integrated, single-stage, self-biased, and broadband monolithic amplifier module manufactured using the latest semiconductor processes and hermetically sealed in an industry standard package. It contains an input power detector, high-speed MOSFET-based predriver stages, dc voltage regulators, power output stages, bias voltage control circuitry, and wide-range temperature protection.The BGU8L1X is optimized for medium-power applications in the frequency range of 35 MHz to 250 MHz with applications like aircraft, land mobile, marine, and commercial radio. It can also be used in applications requiring a low noise figure, high linearity, or a wide dynamic range. The amplifier is designed to be used in a wide variety of commercial and military applications, including communications, navigation, and military communications.The working principle of the BGU8L1X is based on an RF power detector that senses the input power of the amplifier. This input power is detected and then sent to a predriver stage, which controls the state of the main power MOSFETs. These MOSFETs are what produce the amplified signal. The output power of the device is determined by the bias voltage and is adjustable up to its maximum rated value.The BGU8L1X has several unique features that make it suitable for RF amplifier applications. It has an integrated Class AB linear driver design that provides excellent linearity and good gain stability over temperature. The amplifier also has an integrated over-temperature protection system to protect it from thermal damage. This thermal protection can help reduce the risk of damage to circuitry and components.The BGU8L1X has a low input power requirement, which reduces power consumption and extends its battery life. The amplifier has a low noise figure, which allows it to deliver a very clean signal. This low noise figure helps reduce interferences with other devices.The BGU8L1X also has a high IP3 (third-order intercept). This level of IP3 makes it suitable for applications where large input signal levels can cause unwanted intermodulation distortions. This restriction also keeps the amplifier from causing nonlinear effects on other devices if the input power is high.The BGU8L1X is a reliable RF amplifier with its various features. Its broad input power range from 35 MHz to 250 MHz makes it suitable for a wide variety of applications. Its low noise figure and high IP3 make it suitable for applications requiring high linearity and superior interference rejection. Its integrated protection and low input power requirement allow for extended battery life and reduced power consumption. With these features, the BGU8L1X is a great choice for applications in the medium-power range.

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