Allicdata Part #: | 1603-1114-ND |
Manufacturer Part#: |
BLA9G1011L-300GU |
Price: | $ 187.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF MOSFET LDMOS 32V SOT502F |
More Detail: | RF Mosfet LDMOS 32V 100mA 1.03GHz ~ 1.09GHz 21.8dB... |
DataSheet: | BLA9G1011L-300GU Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 170.24500 |
10 +: | $ 163.05100 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.03GHz ~ 1.09GHz |
Gain: | 21.8dB |
Voltage - Test: | 32V |
Current Rating: | 4.2µA |
Noise Figure: | -- |
Current - Test: | 100mA |
Power - Output: | 317W |
Package / Case: | SOT-502A |
Supplier Device Package: | SOT502F |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLA9G1011L-300GU is a small signal field effect transistor (FET). FETs are electronic devices that act as an amplifier or an electronic switch when a varying electric field is applied. It is a type of metal–oxide–semiconductor field-effect transistor (MOSFET), specifically an RF MOSFET. It is suitable for use in a number of applications such as radio frequency communications, digital circuits, power electronics, and industrial control systems.
The BLA9G1011L-300GU is a wide-to-narrow bandwidth FET. It is suitable for use in high frequency applications such as amplifiers, oscillators, and mixers. It features a low cut-off frequency of 80 kHz and can operate at frequencies up to 1 GHz.
The BLA9G1011L-300GU is a unipolar design, meaning that it has two p-type terminals and one n-type terminal. The p-type terminals are known as the source and drain, while the n-type terminal is known as the gate. The gate is responsible for controlling the flow of current between the source and drain. When a voltage is applied to the gate, the current flowing from the source to the drain is increased. The amount of current flowing can be controlled by adjusting the voltage level of the gate. By doing this, a wide variety of circuit applications can be created such as amplifiers, oscillators, and mixers.
The BLA9G1011L-300GU is also a low noise device. It has a low noise floor of -95 dBm and can be used in many high frequency applications that require low noise performance. Furthermore, it is designed to be resistant to electrostatic discharge and can withstand voltages up to 1200V without damage. This makes it an ideal device for use in harsh environments.
In conclusion, the BLA9G1011L-300GU is a small signal field effect transistor and a wide-to-narrow bandwidth FET. It is suitable for use in high frequency applications such as amplifiers, oscillators, and mixers. It features a low cut-off frequency, low noise floor and is resistant to electrostatic discharge and voltages up to 1200V. With these features, it makes an ideal device for use in harsh environments and is a great choice for radio frequency communications, digital circuits, power electronics, and industrial control systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLA9G1011LS-300U | Ampleon USA ... | 187.27 $ | 20 | RF MOSFET LDMOS 32V SOT50... |
BLA9G1011L-300GU | Ampleon USA ... | 187.27 $ | 1000 | RF MOSFET LDMOS 32V SOT50... |
BLA9G1011L-300U | Ampleon USA ... | 187.27 $ | 1000 | RF MOSFET LDMOS 32V SOT50... |
BLA9G1011LS-300GU | Ampleon USA ... | 187.27 $ | 1000 | RF MOSFET LDMOS 32V SOT50... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...