BLC2425M8LS300PZ Allicdata Electronics
Allicdata Part #:

1603-1054-ND

Manufacturer Part#:

BLC2425M8LS300PZ

Price: $ 57.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 17DB SOT12501
More Detail: RF Mosfet LDMOS (Dual), Common Source 32V 20mA 2.4...
DataSheet: BLC2425M8LS300PZ datasheetBLC2425M8LS300PZ Datasheet/PDF
Quantity: 77
1 +: $ 51.98130
10 +: $ 49.30060
100 +: $ 44.60560
Stock 77Can Ship Immediately
$ 57.18
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: LDMOS (Dual), Common Source
Frequency: 2.45GHz
Gain: 17.5dB
Voltage - Test: 32V
Current Rating: --
Noise Figure: --
Current - Test: 20mA
Power - Output: 300W
Voltage - Rated: 65V
Package / Case: SOT1250-1
Supplier Device Package: DFM4
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLC2425M8LS300PZ is a FET (Field Effect Transistor), a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) in the RF (Radio Frequency) range. It is a highly reliable device and has great performance that allows its use in various application fields.

The BLC2425M8LS300PZ is mainly used in broadband amplification, high power amplifiers, low noise amplifiers, and frequency mixers. It is well-suited for use in RF applications, such as radio transceivers, test and measurement equipment, cable TV, radar systems, avionics and satellite communications. Its high-power performance makes it a good choice for applications that require high gain and low noise, such as wide-band radio frequency communication links.

The BLC2425M8LS300PZ has a wide working frequency range of up to 20 GHz, and can operate over a wide temperature range of -55 °C to +250 °C. It is also available in several package sizes, from small SMD packages to large ceramic packages.

In terms of its operating principle, the BLC2425M8LS300PZ is an insulated-gate field effect transistor that uses a metal–oxide–semiconductor material at its gate and source. These types of devices have the ability to vary their drain or source current by controlling their gate voltage, which makes them ideal for use in high frequency applications. The FET is a unipolar device, meaning the current flows through a single polarity; the application of a positive voltage between the source and drain attracts majority carriers to the drain, while a negative voltage attracts majority carriers to the source.

The BLC2425M8LS300PZ has a number of features that make it ideal for RF applications. It has a low noise figure and low insertion loss, good linearity, high output power, and exceptional stability, even when exposed to high temperature and wide bandwidths. In addition, it has a robust package designed to handle tough conditions, such as vibrations and shock, and can store large quantities of data in its gate oxide, making it ideal for low power applications.

The BLC2425M8LS300PZ is a great choice for RF applications and its high-power features make it a versatile and reliable device for many types of applications. It has a wide frequency range and is suitable for use in high power amplifiers, low noise amplifiers, frequency mixers, and broadband amplification. These features make it a robust and dependable device for any application requiring a FET or MOSFET.

The specific data is subject to PDF, and the above content is for reference

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