BLD6G21LS-50,112

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	LDMOS (Dual), Common Source
Frequency:	2.02GHz
Gain:	14.5dB
Voltage - Test:	28V
Current Rating:	10.2A
Noise Figure:	--
Current - Test:	170mA
Power - Output:	8W
Voltage - Rated:	65V
Package / Case:	SOT-1130B
Supplier Device Package:	CDFM4

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Introduction

The term BLD6G21LS-50,112 refers to a specific line of field-effect transistors (FETs) manufactured by JRC. The FETs in this series operate in radio-frequency (RF) applications and can be used to build high-performance radio transmitters, receivers, and amplifiers. This article will provide an overview of the BLD6G21LS-50,112\'s application field and working principle.

Application Field

BLD6G21LS-50,112 FETs can be used in a wide range of RF applications, including cellular, satellite, and military radio communication systems. They are also used extensively in consumer radios and audio amplifiers, as well as a variety of medical and industrial applications.The FETs in this series have excellent linearity, which makes them well suited for narrowband applications. The devices have a low input capacitance, which makes them suitable for wideband applications as well. They can be used for frequency conversion, phase shifting, and modulation.The FETs in the BLD6G21LS-50,112 line are also well suited for use in high-dynamic applications, such as power amplifiers and frequency multipliers. The devices are designed to provide a high output impedance and can operate at frequencies of up to 500 MHz.

Working Principle

BLD6G21LS-50,112 FETs are made of silicon, which provides excellent performance and reliability. The FETs utilize a gate-source capacitance, which is used to control the current flow through the device. This capacitance allows the FETs to act as an amplifier, modulator, or oscillator.The FETs are designed to be low noise and have excellent frequency response characteristics. The devices have a low input capacitance and a low input power requirement. The devices are also highly stable and have a long lifetime.

Conclusion

BLD6G21LS-50,112 FETs are well-suited for use in a variety of radio-frequency applications. The FETs have excellent linearity and can provide a high output impedance and low noise. The devices are also highly stable and have a long lifetime. The FETs are made of silicon and utilize a gate-source capacitance to control the current flow.

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