Allicdata Part #: | BLF0910H9LS600J-ND |
Manufacturer Part#: |
BLF0910H9LS600J |
Price: | $ 105.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | BLF0910H9LS600/SOT502/REEL |
More Detail: | RF Mosfet LDMOS 50V 90mA 900MHz ~ 930MHz 18.6dB 60... |
DataSheet: | BLF0910H9LS600J Datasheet/PDF |
Quantity: | 1000 |
60 +: | $ 96.33750 |
Series: | -- |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 900MHz ~ 930MHz |
Gain: | 18.6dB |
Voltage - Test: | 50V |
Current Rating: | 2.8µA |
Noise Figure: | -- |
Current - Test: | 90mA |
Power - Output: | 600W |
Voltage - Rated: | 108V |
Package / Case: | SOT-502B |
Supplier Device Package: | SOT502B |
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The BLF0910H9LS600J is an RF MOSFET, part of a larger family of advanced semiconductor devices which have become popular in wide range of applications due to their superior performance and versatility. This particular MOSFET is built with a flange-mount footprint and has a maximum operating temperature of 175°C.
RF MOSFETs are used in applications requiring high frequency (HF), very high frequency (VHF), and ultra-high frequency (UHF) signals. These devices use very small parts and have excellent control of high frequency transmission with minimal distortion. Because of their low power consumption and high switching capability, they are ideal for use in a variety of power and radio frequency (RF) applications and can be used in receivers, transmitters, switches, and amplifiers.
The BLF0910H9LS600J RF MOSFET is specially designed for applications in communication and network systems, such as radio base stations and wireless communication systems. It is engineered for easy assembly, with a low profile surface-mount package for minimal space requirements. This device features a wide voltage range of 5.5 volts and a high speed switching rate of 8 nanoseconds.
MOSFETs are designed with a transistor as their core component. The basis of these devices is a thin layer of an electrically conductive material, such as doped silicon or gallium arsenide, placed on a substrate of insulating material. As the basic MOSFET structure requires no additional circuitry, it is much simpler than other transistor types. The BLF0910H9LS600J includes an N-channel MOSFET with a junction-gate oxide capacitance of 8nF and a drain-source breakdown of 21V.
Working Principle: MOSFETs work in three steps to transfer current from the source to the drain. First, a gate voltage is applied to the gate connection, which causes a thin layer of oxide-semiconductor material at the junction to reverse its polarity. This causes a region of positive charge in the semiconductor to be attracted to the negative side of the oxide. This, in turn, creates an inversion layer which allows current to flow through it to the drain.
Application Fields: The BLF0910H9LS600J is great for applications such as communications systems, including cell phones, VoIP networks, and wireless communications systems. It is also perfect for automation control systems and home electronics, as the switch speed and low power consumption can allow for rapid control over a wide range of power outputs. Additionally, it can be used in devices like amplifiers, filters, and detectors. This device is also compatible with many digital systems, making it a great choice for digital designers. When used with proper safety precautions, this device can provide reliable performance in any application for which it is used.
The specific data is subject to PDF, and the above content is for reference
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