BLL9G1214L-600U Allicdata Electronics
Allicdata Part #:

1603-1157-ND

Manufacturer Part#:

BLL9G1214L-600U

Price: $ 258.45
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: BLL9G1214L-600/SOT502/TRAY
More Detail: RF Mosfet LDMOS 32V 400mA 1.2GHz ~ 1.4GHz 19dB 600...
DataSheet: BLL9G1214L-600U datasheetBLL9G1214L-600U Datasheet/PDF
Quantity: 1000
1 +: $ 234.95200
10 +: $ 227.88300
Stock 1000Can Ship Immediately
$ 258.45
Specifications
Series: --
Part Status: Active
Transistor Type: LDMOS
Frequency: 1.2GHz ~ 1.4GHz
Gain: 19dB
Voltage - Test: 32V
Current Rating: 5µA
Noise Figure: --
Current - Test: 400mA
Power - Output: 600W
Voltage - Rated: 65V
Package / Case: SOT-502A
Supplier Device Package: SOT502A
Description

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BLL9G1214L-600U is an enhancement-mode field effect transistor, equipped with a silicon carbon gate and a silicon dioxide gate oxide. It is typically used as radio frequency (RF) switching and power amplifying devices, featuring superb linearity and high gain.

Application Field of BLL9G1214L-600U

BLL9G1214L-600U is suitable for different radio frequency (RF) switching and power amplifying applications, e.g. in microwave and millimeter-wave communication systems for cell phones, the internet, and avionic telemetry. Applications include power amplification, attenuators and VOX-controlled (voice operated) switchings. It is also used for gain control, mixers, optical network transmitters, receivers, batteries and other electronic circuits as well as in optical amplifiers, switches and other electronic applications.

Working Principle of BLL9G1214L-600U

The BLL9G1214L-600U is a metal-oxide-semiconductor field-effect transistor (MOSFET), a type of field-effect transistor (FET). It is an enhancement-mode MOSFET which consists of an N-type silicon (Si)-substrate with a thin layer of poly-crystal silicon (Si-poly) on top. The Si-poly layer acts as a gate electrode, controlling the current flowing through the device by voltage applied to the gate. A thin layer of thermal oxide (SiO2) acts as the gate dielectric, isolating the gate from the channel. When a positive voltage is applied to the gate, it modulates the amount of free electrons present in the N-channel, which in turn results in a modulation of the drain-source current. BLL9G1214L-600U exploits the saturation effect of a MOSFET; it has an extremely low on-resistance at high-bias voltage, allowing it to switch very quickly and efficiently. It has a fast switching speed, high temperature stability, and low on-resistance. This makes it particularly well suited to RF applications, where it is used to control power amplifiers and switches.

Advantages of BLL9G1214L-600U

The BLL9G1214L-600U offers several distinct advantages over other types of transistors, including:

  • Fast switching speed
  • High temperature stability
  • Low on-resistance and superior linearity
  • Low distortion
  • High input-impedance, which eliminates the need for external bias resistors
  • Low input-capacitance, allowing low insertion losses

The BLL9G1214L-600U offers excellent performance in a wide variety of applications and is suitable for use in both high-temperature and low-temperature environments. This makes it ideal for communications, aerospace and military applications, where performance and reliability are paramount.

Conclusion

The BLL9G1214L-600U is an enhancement-mode MOSFET and is particularly well suited to RF applications, where it is used to control power amplifiers and switches. It offers a number of advantages, including fast switching speed, high temperature stability, low on-resistance, superior linearity, and low distortion. With its excellent performance and reliability, the BLL9G1214L-600U is suitable for use in a wide range of high-temperature and low-temperature applications, making it the ideal choice for communications, aerospace and military applications.

The specific data is subject to PDF, and the above content is for reference

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