BLM8G0710S-45ABGY

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	LDMOS (Dual)
Frequency:	957.5MHz
Gain:	35dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	30mA
Power - Output:	3W
Voltage - Rated:	65V
Package / Case:	SOT-1212-2
Supplier Device Package:	16-HSOP

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The BLM8G0710S-45ABGY is a Wideband GaN-Based Discrete HEMT Transistor, best suited for high-performance cellular infrastructure base station applications for both Transmission and Reception.

Application Field

The BLM8G0710S-45ABGY is primarily designed for applications of high bandwidth and linearity, such as wideband amplifiers, active filters, and transmitters. This type of RF device is suitable for applications in the cellular infrastructures of 4G, 5G and beyond, particularly for 4G base station applications. The \'G\' in the product code stands for GaN and is important as GaN offers higher operating frequencies, better gain and linearity, which makes it ideal for high performance radio applications.

Working Principle

The BLM8G0710S-45ABGY is a type of GaN based discrete High Electron Mobility (HEMT) transistor. This type of transistor operates using a two-dimensional electron gas that flows between two high-energy barrier layers which is produced by the difference in a material’s band gap structure. The high electron mobility and low noise density of the GaN HEMT technology, makes it an excellent choice for RF and microwave applications. The GaN technology is also more efficient than other technologies due to the high heat dissipation it offers.The power output of the BLM8G0710S-45ABGY is 45 watts minimum and can provide up to 52 watts of performance with greater than 35 dB of small signal gain @ 2GHz. This high performance is achieved by combining the advanced GaN device structure with an advanced physical layout. The aluminum nitride substrate with copper emitter design also enhances the conductivity, enabling the device to reach higher power levels, reduced harmonic distortions and have lower noise levels.

Conclusion

The BLM8G0710S-45ABGY is a high-performance GaN based discrete transistor, which is ideal for use in cellular infrastructure base station applications for both transmission and reception. It has high electron mobility and low noise density and can provide up to 52 watts of performance with greater than 35dB of small signal gain @ 2GHz, making it a great choice for high bandwidth and linearity applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description