| Allicdata Part #: | 1603-1099-2-ND |
| Manufacturer Part#: |
BLM9D2325-20ABZ |
| Price: | $ 16.25 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Ampleon USA Inc. |
| Short Description: | RF MOSFET LDMOS SOT1462-1 |
| More Detail: | RF Mosfet LDMOS 2.3GHz ~ 2.5GHz 20W 20-PQFN (8x... |
| DataSheet: |  BLM9D2325-20ABZ Datasheet/PDF |
| Quantity: | 1000 |
| 500 +: | $ 14.77070 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | LDMOS |
| Frequency: | 2.3GHz ~ 2.5GHz |
| Gain: | -- |
| Current Rating: | -- |
| Noise Figure: | -- |
| Power - Output: | 20W |
| Voltage - Rated: | 28V |
| Package / Case: | 20-QFN Exposed Pad |
| Supplier Device Package: | 20-PQFN (8x8) |
Description
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Introduction
The BLM9D2325-20ABZ is an RF power transistor offered by Ampleon. It is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed for use in RF power amplifiers. This transistor is suitable for radio base stations, push-pull amplifiers and other RF applications up to 8 GHz frequency. The device is typically used in power amplifier circuitry that operates between 1.7 and 2.1 GHz.
Structure and Characteristics
The device has a C-shaped ceramic package with a gold-plated ceramic lid. This package is rated up to an operating temperature of +175°C. The device has a peak output power of 24 dBm with a gain of 13.7 dB. The device also features power transistors in complementary N and P-channel MOSFET devices with a third gate terminal for biasing.
Circuit Application and Working Principle
The BLM9D2325-20ABZ is typically used in power amplifier circuitry. The circuit is composed of N and P-channel MOSFETs arranged in a push-pull configuration. The P-channel device is biased on the third gate terminal and its drain is tied to the emitter of the N-channel transistor. The N-channel device is biased on the source terminal and its drain is tied to the collector of the P-channel device.
The amplifier is designed to operate in a Class A configuration where the transistor is biased to a constant current and the transistor is saturated in its active region. The amplifier circuit is usually configured to produce a linear gain with a high output power. The large transconductance of the transistors used in the circuit ensures high gain and low distortion.
Conclusion
The BLM9D2325-20ABZ is an RF power transistor offered by Ampleon. This device is suitable for radio base stations, push-pull amplifiers and other RF applications up to 8 GHz frequency. It is commonly used in power amplifier circuitry which is composed of N and P-channel transistors arranged in a push-pull configuration. The device is designed to produce a linear gain with high output power and low distortion.
The BLM9D2325-20ABZ is an RF power transistor offered by Ampleon. It is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed for use in RF power amplifiers. This transistor is suitable for radio base stations, push-pull amplifiers and other RF applications up to 8 GHz frequency. The device is typically used in power amplifier circuitry that operates between 1.7 and 2.1 GHz.
Structure and Characteristics
The device has a C-shaped ceramic package with a gold-plated ceramic lid. This package is rated up to an operating temperature of +175°C. The device has a peak output power of 24 dBm with a gain of 13.7 dB. The device also features power transistors in complementary N and P-channel MOSFET devices with a third gate terminal for biasing.
Circuit Application and Working Principle
The BLM9D2325-20ABZ is typically used in power amplifier circuitry. The circuit is composed of N and P-channel MOSFETs arranged in a push-pull configuration. The P-channel device is biased on the third gate terminal and its drain is tied to the emitter of the N-channel transistor. The N-channel device is biased on the source terminal and its drain is tied to the collector of the P-channel device.
The amplifier is designed to operate in a Class A configuration where the transistor is biased to a constant current and the transistor is saturated in its active region. The amplifier circuit is usually configured to produce a linear gain with a high output power. The large transconductance of the transistors used in the circuit ensures high gain and low distortion.
Conclusion
The BLM9D2325-20ABZ is an RF power transistor offered by Ampleon. This device is suitable for radio base stations, push-pull amplifiers and other RF applications up to 8 GHz frequency. It is commonly used in power amplifier circuitry which is composed of N and P-channel transistors arranged in a push-pull configuration. The device is designed to produce a linear gain with high output power and low distortion.
The specific data is subject to PDF, and the above content is for reference
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