BLP35M805Z Allicdata Electronics
Allicdata Part #:

1603-1033-2-ND

Manufacturer Part#:

BLP35M805Z

Price: $ 8.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 18DB 16VDFN
More Detail: RF Mosfet LDMOS 28V 55mA 2.14GHz 18dB 750mW 16-HVS...
DataSheet: BLP35M805Z datasheetBLP35M805Z Datasheet/PDF
Quantity: 1000
500 +: $ 7.52948
Stock 1000Can Ship Immediately
$ 8.29
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS
Frequency: 2.14GHz
Gain: 18dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 55mA
Power - Output: 750mW
Voltage - Rated: 65V
Package / Case: 16-VDFN Exposed Pad
Supplier Device Package: 16-HVSON (6x4)
Description

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The BLP35M805Z is a part of the BLP35M series of Radio Frequency (RF) Field Effect Transistors (FETs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). It is a high-performance, advanced device that is suitable for use in wide variety of demanding applications. The BLP35M805Z has a wide supply range of 4.75V to 16V and is capable of operating up to a maximum of 120V. It is made from a special dielectric material called Proximitor, which works to ensure a maximum efficiency of operation and long-term reliability.

The BLP35M805Z is commonly used in radio frequency amplifiers and switches, where its robust construction and line of sight capability make it an ideal choice. It is also used in motor control applications and can be found in many types of consumer electronics, including cellular phones and tablets. As an RF component, the BLP35M805Z is capable of operating at frequencies up to 4GHz and has a low noise floor of just 7dB.

The working principle of the BLP35M805Z is based on principles of charge transfer. A source of electrical current is provided to the FET\'s drain, while the gate and source terminals act as a capacitor. When a voltage difference is applied to the gate and source terminals, an electrical field is created and this causes a flow of electrons from one terminal to the other. This charge movement is controlled by the amount of voltage applied, enabling the control of the current flowing between the drain and source.

The BLP35M805Z also features a number of features that make it suitable for high-performance applications. It has high immunity to ambient electrical noise, meaning that it can be used in applications where signal integrity is of paramount importance. Additionally, its low operating temperature makes it an efficient device that can be used in a variety of demanding environments.

In summary, the BLP35M805Z is a versatile, high-performance RF FET and MOSFET, suitable for use in a number of challenging applications. Its wide supply range and superior signal integrity make it an ideal choice for radio frequency amplifiers and switches, motor control applications, and many types of consumer electronics. Additionally, its robust construction and low operating temperature provide it with a high degree of reliability and longevity.

The specific data is subject to PDF, and the above content is for reference

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