BLP9H10-30Z

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The BLP9H10-30Z belongs to a family of RF Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (FET). These transistors are capable of much higher frequencies than their bipolar counterparts and are used in applications such as low-noise amplifiers, power amplifiers, and oscillator circuits that require frequency streams with good accuracy and stability. This particular transistor, the BLP9H10-30Z, is a Dual Gate (DG) type with Non-Linearity Output Power (NLOP) characteristics.

The BLP9H10-30Z FET offers a wide range of advantages over other types of transistors and it is this which makes it an ideal choice for many microwave and RF applications. Its wide bandwidth and low-noise operation allows for the design of high-speed circuits, while its high power handling capability makes it suitable for use in power amplifiers and amplifiers for direct broadcast satellite (DBS) applications. Furthermore, its NLOP characteristics provide improved performance and greater stability in oscillator and low-noise amplifier applications, making it more reliable than other types of FETs.

The mode of operation of the BLP9H10-30Z is based on the principles of operation of a FET. A metal-oxide-semiconductor is a type of solid-state transistor in which a metal layer is inserted between two semiconductor layers, forming a so-called ‘gate’. This gate allows current to flow through the two semiconductor layers by using a voltage applied to it. There are two types of voltages which can be applied to the gate: a positive voltage to turn on (or enhance) the flow of current, and a negative voltage to turn off (or stop) the flow of current.

The bulk of the BLP9H10-30Z is composed of a gate terminal, a drain terminal, and a source terminals. The gate terminal is used for applying the voltage for the gate voltage control, while the drain and source terminals are used for the injection of current into the FET and its release from the FET respectively. With the gate voltage applied, current will flow from the drain to the source, whereas with the gate voltage removed, no current will be able to flow through the FET. This is the fundamental principle of operation of a FET.

In a DG FET such as the BLP9H10-30Z, two gates are used, an input gate and an output gate. The input gate controls the amount of current flowing into the FET, while the output gate controls the amount of current which flows out of the FET. This type of FET provides the advantage of improved linearity, as both gates can be independently adjusted to keep the current flowing through the FET at a desired level. The NLOP characteristics of the BLP9H10-30Z provide improved stability, increased linearity and better control at high frequencies in particular.

The BLP9H10-30Z is ideal for use in many RF applications, such as power amplifiers, oscillator circuits, mobile radio antennas and low-noise amplifiers. Its two-gate design and NLOP characteristics make it even more suitable for high frequency applications, enabling the design of efficient and reliable circuits which are able to operate accurately and with improved stability. This versatility, coupled with its wide bandwidth and low-noise operation, make the BLP9H10-30Z a attractive choice for a wide range of RF applications.

The specific data is subject to PDF, and the above content is for reference