Allicdata Part #: | BLU6H0410L-600P,11-ND |
Manufacturer Part#: |
BLU6H0410L-600P,11 |
Price: | $ 463.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Ampleon USA Inc. |
Short Description: | RF FET LDMOS 110V 21DB SOT539A |
More Detail: | RF Mosfet LDMOS (Dual), Common Source 50V 1.3A 860... |
DataSheet: | BLU6H0410L-600P,11 Datasheet/PDF |
Quantity: | 1000 |
20 +: | $ 420.99400 |
Supplier Device Package: | SOT539A |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | LDMOS (Dual), Common Source |
Frequency: | 860MHz |
Gain: | 21dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1.3A |
Power - Output: | 250W |
Voltage - Rated: | 110V |
Package / Case: | SOT539A |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BLU6H0410L-600P, 11 Application Field and Working Principle
BLU6H0410L-600P is a 11 application field and working principle transistor-FET-RF mosfet. It is specifically designed for radio frequency applications and is widely used for high frequency, power and high voltage applications. It features good thermal stability with enhanced current gain and stability.
This type of transistor works on the principle of field effect transistor, where there is the application of an electric field that modulates the properties of a semiconductor material. The source, gate, and drain terminals of the transistor provide the proper control over the current flow in these devices, which is used for amplifying many types of signals. The main idea of its working principle is to control the current flow through the transistor.
This type of device is used in a wide range of applications including audio amplifiers, computer aided design systems, radio circuit, video cameras, and some types of display devices. It is also used in mobile phone base stations.
The major difference between this type of transistor and a normal transistor is the way in which it is triggered. With a normal bipolar junction transistor, the drain to source voltage is the major factor that affects the current flow through the device. With the RF transistor, the gate voltage is the main factor that determines the current flow through the device.
In order to improve the current gain and thermal stability, the BLU6H0410L-600P transistor has a built-in body capacitance that helps to smooth the input gate voltage. It also features a built-in active current amplifier, which helps to ensure that the current gain is sufficient to enable the transistor to amplify a wide range of frequencies.
Furthermore, the transistor features a metal oxide semiconductor gate with either a Zener or piezoelectric gate material, depending on the customer’s requirements. This material ensures that the device can withstand high voltages and temperatures while still providing high performance.
The BLU6H0410L-600P transistor is a perfect choice for radio frequency applications, because it offers good performance and reliability. It is cost-effective and is available at competitive prices. Furthermore, it is an ideal choice for applications in telecommunication, semiconductor, medical, and military applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BLU6H0410L-600P,11 | Ampleon USA ... | 463.09 $ | 1000 | RF FET LDMOS 110V 21DB SO... |
BLU6H0410LS-600P,1 | Ampleon USA ... | 463.09 $ | 1000 | RF FET LDMOS 110V 21DB SO... |
FET RF 68V 2.16GHZ NI-400RF Mosfet LDMOS...
FET RF 68V 1.99GHZ TO270-4RF Mosfet LDMO...
FET RF 40V 175MHZ TO272-6 WRAPRF Mosfet ...
FET RF 65V 2.17GHZ NI780SRF Mosfet LDMOS...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...
FET RF 80V 1.6GHZ M243RF Mosfet LDMOS 28...