BPS9G2934X-400Z

Series:	--
Part Status:	Active
Transistor Type:	LDMOS
Frequency:	2.9GHz ~ 3.4GHz
Gain:	12dB
Voltage - Test:	32V
Current Rating:	--
Noise Figure:	--
Current - Test:	400mA
Power - Output:	400W
Voltage - Rated:	65V
Package / Case:	Module
Supplier Device Package:	Module

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BPS9G2934X-400Z Application Field and Working Principle

The BPS9G2934X-400Z is a laterally diffused metal oxide semiconductor field effect transistor (LDMOSFET) type of transistor designed for use in a variety of radio frequency (RF) applications. This particular component has an extremely high typical power rating of 17 Watts which makes it a suitable choice for many modern applications. In particular, it can be found in RF amplifiers, power amplifiers, and voltage-controlled oscillators, as well as other low noise and high-frequency circuits. The BPS9G2934X-400Z is highly suited to use at frequencies up to 2GHz and is able to maintain a steady supply of power in multiple different environments, including those that involve high temperatures and high powers. This component is also capable of delivering incredible power density in a very small package which makes it a desirable choice for those who need to maximize their power output.The specific construction of the BPS9G2934X–400Z is what allows it to achieve such power-dense efficiency and reliable performance. This transistor consists of two metal layers which are separated by an insulator. This combination of layers gives rise to the name “LDMOSFET”. The metal layers include one that acts as a ‘gate’, which is used to control the flow of current, and the other one acts as an ‘oxide layer’ which prevents excessive current from leaking.In terms of device operation, the operation of the BPS9G2934X–400Z works by controlling the electric field between the gate and the source (S) which in turn affects the flow of current between the source and the drain (D). The source and the drain are connected using an N-channel and a P-channel MOSFET, respectively. When a voltage is applied to the gate, an electric field is created which modulates the current between the source and the drain. When there is no voltage applied to the gate then no current flows. This type of operation allows the transistor to maintain high levels of efficiency while still delivering high amounts of power.In terms of physical characteristics, the BPS9G2934X–400Z has a very small size and the package it comes in occupies less than 2.5 square inches. The small size makes it easy to incorporate into modern applications, and it does not require significant space for mounting. Additionally, the component features a low thermal impedance for improved power efficiency, and it also has a built-in gate oxide for improved ESD immunity.In conclusion, the BPS9G2934X–400Z is a transistor designed for use in a variety of radio frequency applications, and it is an excellent choice for those who need a high-power and high-efficiency device. It is capable of delivering the required power even under the most arduous conditions, and it features a very small package for use in more compact applications. The built-in gate oxide and low thermal impedance also provide improved ESD immunity and power efficiency, respectively, making the BPS9G2934X–400Z a great choice for anyone looking to maximize their system’s performance.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description