BR25A1MF-3MGE2 Allicdata Electronics

BR25A1MF-3MGE2 Integrated Circuits (ICs)

Allicdata Part #:

BR25A1MF-3MGE2TR-ND

Manufacturer Part#:

BR25A1MF-3MGE2

Price: $ 1.55
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 1M SPI 10MHZ 8SOP
More Detail: EEPROM Memory IC 1Mb (128K x 8) SPI 10MHz 8-SOP
DataSheet: BR25A1MF-3MGE2 datasheetBR25A1MF-3MGE2 Datasheet/PDF
Quantity: 1000
2500 +: $ 1.40468
Stock 1000Can Ship Immediately
$ 1.55
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP
Description

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Memory

The BR25A1MF-3MGE2 are embedded memories designed to provide flexible, low-power memory solutions for wide variety of digital logic and microprocessor designs. They are based on the latest generation memory technology, the eMMC 4.51 standard. Their innovative, high-density and low-power architecture is ideal for future and existing embedded applications.

The BR25A1MF-3MGE2 memory come in a variety of densities and features that can meet any system requirement. They offer a maximum of 256Gb in multiple packages and die sizes ranging from 8bits to 256bits. With features such as 60 MHz clock, advanced power management, error control, logical address maps, read/write functions and multiple data transfer rates, these embedded memories are ideal for high-density, low-power designs.

The BR25A1MF-3MGE2 memory devices offer a high level of flexibility and performance. Their architecture allows for multiple applications to be developed with a single, highly efficient design. This allows for a smaller form-factor, a lower power consumption and a greater system performance.

The BR25A1MF-3MGE2 memory devices are designed specifically for embedded applications. They are designed to operate over a wide temperature range and in harsh environments. They also offer advanced power management and an enhanced error correction code which provides a high level of data integrity.

The BR25A1MF-3MGE2 memory devices have a number of different application fields and working principles. They are suitable for applications where large amounts of data need to be stored, such as digital video, GPS and audio applications. They are also used for applications such as automotive, industrial, gaming, computing and consumer electronics.

The BR25A1MF-3MGE2 memory devices employ NAND Flash technology, which allows for faster boot times, longer life cycles and lower power consumption. They have a powerful, self-programming error correction code and advanced power management for the ultimate in reliability and performance.

The BR25A1MF-3MGE2 memory provides developers with an easy-to-program, high-density and low-power memory solution. With their flexible design and high-quality performance, they are an ideal choice for high-density, low-power applications.

The specific data is subject to PDF, and the above content is for reference

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