Allicdata Part #: | BR25H080FVT-2CE2TR-ND |
Manufacturer Part#: |
BR25H080FVT-2CE2 |
Price: | $ 0.22 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 8K SPI 10MHZ 8TSSOPB |
More Detail: | EEPROM Memory IC 8Kb (1K x 8) SPI 10MHz 8-TSSOP-B |
DataSheet: | BR25H080FVT-2CE2 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.20537 |
Series: | Automotive, AEC-Q100 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 8Kb (1K x 8) |
Clock Frequency: | 10MHz |
Write Cycle Time - Word, Page: | 4ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP-B |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BR25H080FVT-2CE2 is one of the most commonly used memory components in the electronics industry. It is a 28-pin dual-in-line (DIL) package, with a width of 8mm, a length of 16mm, and an operating temperature range of 0 to 70 degrees Celsius. The part is most often used in industrial applications such as embedded systems, automotive, and aerospace.
BR25H080FVT-2CE2 is a nonvolatile memory component that is used to hold data without an external power supply. The part can store up to 8K words of data, and has a maximum operating speed of 8MHz. It is a static random access memory (SRAM) component that is commonly used for storing static data in computers and other digital systems. Typically, the microcontroller reads from the memory and stores the data in the BR25H080FVT-2CE2 chip.
The part has several features that make it especially suited for industrial applications. It has E2 protection, which prevents accidental damage or destruction of the stored data. It also has an advanced self-timed page programming architecture, which makes it possible to program the part faster than other memories. Additionally, it has wear-leveling algorithms, which increase its overall reliability and reduce wear on the memory.
BR25H080FVT-2CE2’s working principle is simple. The microcontroller initiates a read or write cycle by sending out a chip select signal. The part then sends back an acknowledge signal, and the data can be exchanged. The part has two main circuits: the Sense Amplifier and the Memory Refresh Circuit. The Sense Amplifier senses the voltage level of the memory cells and converts it into a digital signal. The Memory Refresh Circuit periodically refreshes the memory cells to ensure data integrity.
The BR25H080FVT-2CE2 is designed to meet the requirements of industrial applications where reliability is key. It is a highly reliable, low power, and fast memory component that is suitable for many types of applications. Its E2 protection, advanced page programming, and wear-leveling algorithms make it a reliable component for long-term use in industrial environments.
The specific data is subject to PDF, and the above content is for reference
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