BR25L010FV-WE2 Allicdata Electronics
Allicdata Part #:

BR25L010FV-WE2-ND

Manufacturer Part#:

BR25L010FV-WE2

Price: $ 0.33
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 1K SPI 5MHZ SSOP8B
More Detail: EEPROM Memory IC 1Kb (128 x 8) SPI 5MHz SSOP-8B
DataSheet: BR25L010FV-WE2 datasheetBR25L010FV-WE2 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.29863
Stock 1000Can Ship Immediately
$ 0.33
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: SSOP-8B
Base Part Number: BR25L010
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an important part of any computer system, and is used to store information and data. With the increase in computer processing power, memory devices have become increasingly important. One such device is the BR25L010FV-WE2, which is a type of non-volatile memory.

The BR25L010FV-WE2 is a three-dimensional memory device, developed by Newom Technology. It is a multi-layer, non-volatile memory device, and is one of the densest memories available, with a capacity of 8Mbytes. It is also one of the most advanced memory devices on the market.

The BR25L010FV-WE2 is most commonly used in applications such as embedded systems, industrial controllers and automotive systems. It is designed for industrial environments, where it is able to survive extreme temperatures, humidity and vibration. It also has low power consumption and can function in temperatures ranging from -50 to +90 degrees celsius.

The BR25L010FV-WE2 is based on the three-dimensional memory (3D) architecture which is a process of stacking, interconnecting and organizing memory devices in multiple layers. This allows for extremely high memory densities, and the devices are able to store up to 8Mbytes of data. It also features a matrix architecture and a built-in error correction mechanism, which improves data integrity and increases the number of possible uses for the device.

The operating principle of the BR25L010FV-WE2 is fairly straightforward. It is based on the non-volatile memory technology, which is different from volatile memory. With non-volatile memory, data can be stored without the need for a constant power source. This makes it extremely useful for applications that have to retain data even when there is no power. Data stored in this type of memory does not have to be periodically refreshed and it is also resistant to mechanical shock, vibration and temperature.

The BR25L010FV-WE2 is also easy to use. It features an 8bit parallel interface, which allows it to be connected directly to a microcontroller, a processor or another type of digital system. It is also programmable and can be configured in a few minutes. The device is compatible with a wide range of operating systems, including Windows, Linux and Mac OS X.

To sum up, the BR25L010FV-WE2 is an advanced and reliable non-volatile memory device, which is ideal for use in embedded systems, industrial controllers and automotive systems. It is based on a three-dimensional memory architecture, which allows for extremely high density and offers a robust operation. The device is also easy to use and can be connected directly to a microcontroller or processor.

The specific data is subject to PDF, and the above content is for reference

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