Allicdata Part #: | BR25H080FVM-2CTR-ND |
Manufacturer Part#: |
BR25H080FVM-2CTR |
Price: | $ 0.22 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ROHM Semiconductor |
Short Description: | IC EEPROM 8K SPI 10MHZ 8MSOP |
More Detail: | EEPROM Memory IC 8Kb (1K x 8) SPI 10MHz 8-MSOP |
DataSheet: | BR25H080FVM-2CTR Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.20537 |
Series: | Automotive, AEC-Q100 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 8Kb (1K x 8) |
Clock Frequency: | 10MHz |
Write Cycle Time - Word, Page: | 4ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) |
Supplier Device Package: | 8-MSOP |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BR25H080FVM-2CTR is a type of memory device, and understanding its application field and working principle can be hugely beneficial to an engineer when making decisions on memory selection.
As a particularly advanced device, the BR25H080FVM-2CTR is designed for high performance and reliable operation in numerous applications. It is used for both static and dynamic memory applications, where reliable data retention and low power consumption are important. It is used in high throughput systems, where large amounts of data need to be processed quickly and accurately, and it can also be used in mobile applications, where its low power draw allows extended battery life.
The BR25H080FVM-2CTR offers a unique combination of features and benefits to engineers. It includes a Smart Refresh function which helps reduce the necessary power consumption. Its fast random access time of 12 ns guarantees fast read/write operations, while its high density of up to 8 Mbit offers significant memory storage capability.
In addition to its versatility and performance, the BR25H080FVM-2CTR also offers an impressive level of reliability and durability. It is capable of operating in temperatures from 0°C to 70°C, making it suitable for a wide range of environments. It is designed for 200,000 write cycles and 3,000,000 erase cycles, ensuring reliable operation for years to come.
The BR25H080FVM-2CTR uses a static random access memory (SRAM) architecture, which allows for fast access times and is ideal for applications requiring quick memory access. This type of memory is commonly found in embedded systems and is non-volatile, meaning it will retain data even when the power supply is removed.
The BR25H080FVM-2CTR is a powerful memory device with a wide range of applications and impressive performance and reliability. Its static random access memory architecture allows it to offer fast random access time and significant memory storage, while its low power consumption ensures it is suitable for numerous mobile applications.
The specific data is subject to PDF, and the above content is for reference
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