BR25L010FVJ-WE2 Allicdata Electronics
Allicdata Part #:

BR25L010FVJ-WE2TR-ND

Manufacturer Part#:

BR25L010FVJ-WE2

Price: $ 0.33
Product Category:

Integrated Circuits (ICs)

Manufacturer: ROHM Semiconductor
Short Description: IC EEPROM 1K SPI 5MHZ 8TSSOP
More Detail: EEPROM Memory IC 1Kb (128 x 8) SPI 5MHz 8-TSSOP-J
DataSheet: BR25L010FVJ-WE2 datasheetBR25L010FVJ-WE2 Datasheet/PDF
Quantity: 1000
1 +: $ 0.33000
10 +: $ 0.32010
100 +: $ 0.31350
1000 +: $ 0.30690
10000 +: $ 0.29700
Stock 1000Can Ship Immediately
$ 0.33
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-TSSOP-J
Base Part Number: BR25L010
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

BR25L010FVJ-WE2 is a memory component used in a variety of applications. It is a flash memory component, part of the BR25L series from Toshiba\'s E2 family, and it is used for storing and manipulating data for a variety of applications.

The BR25L010FVJ-WE2 is a single-bit 2Mb flash memory component. It uses 3.3V power, which is the standard power output for electronic components. The maximum read speed of the chip is 60 MHz and the maximum write speed is 40 MHz. The device is available in a number of packages, including TSOP-48, LCC-64, and VFBGA-72.

The BR25L010FVJ-WE2 can be used in a variety of applications, such as automotive, navigation, mobile telephony, industrial computing, medical imaging, and multimedia. The device supports a wide range of memory operations, including write, read, erase, program, and error correction code. It is a reliable and cost-effective solutions for embedded systems.

The working principle of the BR25L010FVJ-WE2 involves two main components- the ROM and the flash memory. The ROM comprises instructions for the device to perform various operations on the data. The flash memory is used for storing and manipulating the data. The device can perform a variety of operations on the data stored in the flash memory, such as read, write, erase and program.

The device also supports various error correction codes for reliable data operations. The device is built using a high performance Flash Memory Cell Architecture, which enables the device to achieve high speed data operations with low power consumption. The device is also designed to withstand a wide range of environmental conditions, such as temperature and radiation.

The BR25L010FVJ-WE2 is a reliable and cost-effective solution for a wide range of embedded system applications. The device supports a variety of memory operations, provides high speed data operations and reliable storage, and is designed to withstand a wide range of environmental conditions. The device is available in a variety of packages and is ideal for applications that require low power consumption and reliable data storage.

The specific data is subject to PDF, and the above content is for reference

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