BR25L040FVT-WE2

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	4Kb (512 x 8)
Clock Frequency:	5MHz
Write Cycle Time - Word, Page:	5ms
Memory Interface:	SPI
Voltage - Supply:	1.8 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP-B
Base Part Number:	BR25L040

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<div class="category">Memory</div><div class="content"><p>BR25L040FVT-WE2 is used in many application fields. It is a Flash Memory IC, with low power-consumption, small size and high write/erase reliability. It is widely used in consumer electronics and automotive applications, such as digital cameras, car navigation systems, portable music players, and handheld electronic devices.</p> <p>The working principle of BR25L040FVT-WE2 is based on the well-known properties of flash memory, which is a type of non-volatile memory. Flash memory stores data even after losing power, and can be reprogrammed without being erased. The BR25L040FVT-WE2 utilizes a particular type of flash memory known as NAND Flash memory. In this type of memory, data is stored on a series of interconnected "cells" that can be programmed with one to four bits of data. The amount of data stored in each cell is determined by the size of the cell, and the number of cells in the memory chip.</p><p>The BR25L040FVT-WE2 uses four layers of a conductor, semiconductor and insulator stack to make up the core of its circuitry. The top layer of the stack is an electrical insulator known as a silicon nitride dielectric layer that acts as an insulator for both the NAND cells and for the underlying components. Below this top layer is a. NAND cell array that can store up to 16 bits of data in each cell. The fourth layer of the stack is a semiconductor layer, which serves to bridge the two other layers together electronically.</p><p>The data stored in the NAND cell arrays is read and programmed using CMOS (complementary metal-oxide-semiconductor) transistors. These transistors control the flow of electricity between the cells and the external components. Once programmed, the data can be read out and stored on the flash memory chip.</p><p>The BR25L040FVT-WE2 has many advantages over other types of memory, including low power consumption, small size, high write/erase reliability, and superior temperature resistance. It is also easy to use, with no external controller or drivers required.</p></div>

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